PDTA114EQA - Аналоги. Основные параметры
Наименование производителя: PDTA114EQA
Тип материала: Si
Полярность: PNP
Встроенный резистор цепи смещения R1 = 10 kOhm
Встроенный резистор цепи смещения R2 = 10 kOhm
Соотношение сопротивлений R1/R2 = 1
Максимальная рассеиваемая мощность (Pc): 0.28
W
Макcимально допустимое напряжение коллектор-база (Ucb): 50
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 10
V
Макcимальный постоянный ток коллектора (Ic): 0.1
A
Предельная температура PN-перехода (Tj): 150
°C
Граничная частота коэффициента передачи тока (ft): 180
MHz
Ёмкость коллекторного перехода (Cc): 3
pf
Статический коэффициент передачи тока (hfe): 30
Корпус транзистора:
SOT1215
Аналоги (замена) для PDTA114EQA
-
подбор ⓘ биполярного транзистора по параметрам
PDTA114EQA - технические параметры
..1. Size:2803K nxp
pdta143eqa pdta114eqa pdta124eqa pdta144eqa.pdf 

PDTA143/114/124/144EQA series 50 V, 100 mA PNP resistor-equipped transistors Rev. 1 18 December 2015 Product data sheet 1. Product profile 1.1 General description 100 mA PNP Resistor-Equipped Transistor (RET) family in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. Table 1. Product overview Type nu
6.1. Size:58K motorola
pdta114eu 6.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 PDTA114EU PNP resistor-equipped transistor 1999 Apr 13 Product specification Supersedes data of 1998 May 18 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA114EU FEATURES Built-in bias resistors R1 and R2 (typ. 10 k each) 3 handbook, 4 columns Simplification of circuit design
6.2. Size:54K motorola
pdta114eef 2.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTA114EEF PNP resistor-equipped transistor 1999 May 21 Preliminary specification Supersedes data of 1998 Nov 11 Philips Semiconductors Preliminary specification PNP resistor-equipped transistor PDTA114EEF FEATURES PINNING Power dissipation comparable to SOT23 PIN DESCRIPTION Built-in bias resistors R1 and R2 (typ. 10 k each) 1
6.3. Size:58K motorola
pdta114es 2.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 PDTA114ES PNP resistor-equipped transistor 1998 May 18 Product specification Supersedes data of 1997 Jul 02 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA114ES FEATURES Built-in bias resistors R1 and R2 (typ. 10 k each) Simplification o
6.4. Size:57K motorola
pdta114ek 2.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D114 PDTA114EK PNP resistor-equipped transistor 1998 May 19 Product specification Supersedes data of 1997 Jul 04 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA114EK FEATURES Built-in bias resistors R1 and R2 (typ. 10 k each) 3 Simplific
6.5. Size:57K motorola
pdta114ee 2.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTA114EE PNP resistor-equipped transistor Preliminary specification 1998 Jul 23 Supersedes data of 1997 Jul 03 File under Discrete Semiconductors, SC04 Philips Semiconductors Preliminary specification PNP resistor-equipped transistor PDTA114EE FEATURES Built-in bias resistors R1 and R2 (typ. 10 k each) Simplification of circuit
6.6. Size:56K motorola
pdta114et 5.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 PDTA114ET PNP resistor-equipped transistor 1999 Apr 13 Product specification Supersedes data of 1998 May 15 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA114ET FEATURES Built-in bias resistors R1 and R2 (typ. 10 k each) 3 Simplification of circuit design handbook, 4 columns 3
6.8. Size:58K philips
pdta114eu 6.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 PDTA114EU PNP resistor-equipped transistor 1999 Apr 13 Product specification Supersedes data of 1998 May 18 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA114EU FEATURES Built-in bias resistors R1 and R2 (typ. 10 k each) 3 handbook, 4 columns Simplification of circuit design
6.9. Size:54K philips
pdta114eef 2.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTA114EEF PNP resistor-equipped transistor 1999 May 21 Preliminary specification Supersedes data of 1998 Nov 11 Philips Semiconductors Preliminary specification PNP resistor-equipped transistor PDTA114EEF FEATURES PINNING Power dissipation comparable to SOT23 PIN DESCRIPTION Built-in bias resistors R1 and R2 (typ. 10 k each) 1
6.10. Size:58K philips
pdta114es 2.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 PDTA114ES PNP resistor-equipped transistor 1998 May 18 Product specification Supersedes data of 1997 Jul 02 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA114ES FEATURES Built-in bias resistors R1 and R2 (typ. 10 k each) Simplification o
6.11. Size:57K philips
pdta114ek 2.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D114 PDTA114EK PNP resistor-equipped transistor 1998 May 19 Product specification Supersedes data of 1997 Jul 04 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA114EK FEATURES Built-in bias resistors R1 and R2 (typ. 10 k each) 3 Simplific
6.12. Size:57K philips
pdta114ee 2.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTA114EE PNP resistor-equipped transistor Preliminary specification 1998 Jul 23 Supersedes data of 1997 Jul 03 File under Discrete Semiconductors, SC04 Philips Semiconductors Preliminary specification PNP resistor-equipped transistor PDTA114EE FEATURES Built-in bias resistors R1 and R2 (typ. 10 k each) Simplification of circuit
6.13. Size:56K philips
pdta114et 5.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 PDTA114ET PNP resistor-equipped transistor 1999 Apr 13 Product specification Supersedes data of 1998 May 15 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA114ET FEATURES Built-in bias resistors R1 and R2 (typ. 10 k each) 3 Simplification of circuit design handbook, 4 columns 3
6.14. Size:859K nxp
pdta114ee pdta114em pdta114et pdta114eu.pdf 

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
Другие транзисторы... PBSS4360X
, PBSS5220PAPS
, PBSS5250TH
, PBSS5255PAPS
, PBSS5260PAPS
, PBSS5350TH
, PBSS5360PAS
, PBSS5360X
, TIP41C
, PDTA114TMB
, PDTA114YQA
, PDTA115EMB
, PDTA115TMB
, PDTA123JQA
, PDTA123TMB
, PDTA123YMB
, PDTA124EMB
.