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PDTA114EQA PDF Specs and Replacement


   Type Designator: PDTA114EQA
   Material of Transistor: Si
   Polarity: PNP
   Built in Bias Resistor R1 = 10 kOhm
   Built in Bias Resistor R2 = 10 kOhm
   Typical Resistor Ratio R1/R2 = 1

Absolute Maximum Ratings


   Maximum Collector Power Dissipation (Pc): 0.28 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics


   Transition Frequency (ft): 180 MHz
   Collector Capacitance (Cc): 3 pF
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: SOT1215
 

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PDTA114EQA PDF detailed specifications

 ..1. Size:2803K  nxp
pdta143eqa pdta114eqa pdta124eqa pdta144eqa.pdf pdf_icon

PDTA114EQA

PDTA143/114/124/144EQA series 50 V, 100 mA PNP resistor-equipped transistors Rev. 1 18 December 2015 Product data sheet 1. Product profile 1.1 General description 100 mA PNP Resistor-Equipped Transistor (RET) family in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. Table 1. Product overview Type nu... See More ⇒

 6.1. Size:58K  motorola
pdta114eu 6.pdf pdf_icon

PDTA114EQA

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 PDTA114EU PNP resistor-equipped transistor 1999 Apr 13 Product specification Supersedes data of 1998 May 18 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA114EU FEATURES Built-in bias resistors R1 and R2 (typ. 10 k each) 3 handbook, 4 columns Simplification of circuit design ... See More ⇒

 6.2. Size:54K  motorola
pdta114eef 2.pdf pdf_icon

PDTA114EQA

DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTA114EEF PNP resistor-equipped transistor 1999 May 21 Preliminary specification Supersedes data of 1998 Nov 11 Philips Semiconductors Preliminary specification PNP resistor-equipped transistor PDTA114EEF FEATURES PINNING Power dissipation comparable to SOT23 PIN DESCRIPTION Built-in bias resistors R1 and R2 (typ. 10 k each) 1... See More ⇒

 6.3. Size:58K  motorola
pdta114es 2.pdf pdf_icon

PDTA114EQA

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 PDTA114ES PNP resistor-equipped transistor 1998 May 18 Product specification Supersedes data of 1997 Jul 02 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA114ES FEATURES Built-in bias resistors R1 and R2 (typ. 10 k each) Simplification o... See More ⇒

Detailed specifications: PBSS4360X , PBSS5220PAPS , PBSS5250TH , PBSS5255PAPS , PBSS5260PAPS , PBSS5350TH , PBSS5360PAS , PBSS5360X , TIP41C , PDTA114TMB , PDTA114YQA , PDTA115EMB , PDTA115TMB , PDTA123JQA , PDTA123TMB , PDTA123YMB , PDTA124EMB .

History: 2N317 | PDTA123JQA

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