All Transistors. PDTA114EQA Datasheet

 

PDTA114EQA Datasheet and Replacement


   Type Designator: PDTA114EQA
   Material of Transistor: Si
   Polarity: PNP
   Built in Bias Resistor R1 = 10 kOhm
   Built in Bias Resistor R2 = 10 kOhm
   Typical Resistor Ratio R1/R2 = 1
   Maximum Collector Power Dissipation (Pc): 0.28 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 180 MHz
   Collector Capacitance (Cc): 3 pF
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: SOT1215
 

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PDTA114EQA Datasheet (PDF)

 ..1. Size:2803K  nxp
pdta143eqa pdta114eqa pdta124eqa pdta144eqa.pdf pdf_icon

PDTA114EQA

PDTA143/114/124/144EQA series50 V, 100 mA PNP resistor-equipped transistorsRev. 1 18 December 2015 Product data sheet1. Product profile1.1 General description100 mA PNP Resistor-Equipped Transistor (RET) family in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.Table 1. Product overviewType nu

 6.1. Size:58K  motorola
pdta114eu 6.pdf pdf_icon

PDTA114EQA

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D102PDTA114EUPNP resistor-equipped transistor1999 Apr 13Product specificationSupersedes data of 1998 May 18Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA114EUFEATURES Built-in bias resistors R1 and R2(typ. 10 k each)3handbook, 4 columns Simplification of circuit design

 6.2. Size:54K  motorola
pdta114eef 2.pdf pdf_icon

PDTA114EQA

DISCRETE SEMICONDUCTORSDATA SHEETM3D425PDTA114EEFPNP resistor-equipped transistor1999 May 21Preliminary specificationSupersedes data of 1998 Nov 11Philips Semiconductors Preliminary specificationPNP resistor-equipped transistor PDTA114EEFFEATURES PINNING Power dissipation comparable to SOT23PIN DESCRIPTION Built-in bias resistors R1 and R2 (typ. 10 k each)1

 6.3. Size:58K  motorola
pdta114es 2.pdf pdf_icon

PDTA114EQA

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186PDTA114ESPNP resistor-equipped transistor1998 May 18Product specificationSupersedes data of 1997 Jul 02File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA114ESFEATURES Built-in bias resistorsR1 and R2 (typ. 10 k each) Simplification o

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: PBSS5240Z | SUT480H | ASY49 | NB023EY | NB022FU | SUT510EF | NB022FL

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