MRF6408 - Даташиты. Аналоги. Основные параметры

   Наименование производителя: MRF6408
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 60 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 24 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 4 V
   Макcимальный постоянный ток коллектора (Ic): 5 A
   Предельная температура PN-перехода (Tj): 200 °C
   Граничная частота коэффициента передачи тока (ft): 1990 MHz
   Ёмкость коллекторного перехода (Cc): 18 pf
   Статический коэффициент передачи тока (hfe): 20
   Корпус транзистора: CASE395C-01

Аналоги (замена) для MRF6408

MRF6408 Datasheet (PDF)

..1. Size:268K motorola
mrf6408.pdf pdf_icon

0.1. Size:268K motorola
mrf6408r.pdf pdf_icon

0.2. Size:230K motorola
mrf6408rev2.pdf pdf_icon

8.1. Size:120K motorola
mrf6402.pdf pdf_icon

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF6402/D The RF Line NPN Silicon MRF6402 RF Power Transistor The MRF6402 is designed for 1.8 GHz Personal Communications Network (PCN) base stations applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. For ease of design, this transi

8.2. Size:153K motorola
mrf6402rev7.pdf pdf_icon

8.3. Size:276K motorola
mrf6404rev2.pdf pdf_icon

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF6404/D The RF Line MRF6404 NPN Silicon MRF6404K RF Power Transistor The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to 30 W, 1.88 GHz 2.0 GHz. RF POWER TRANSISTOR Specified 26 Volts, 1.88 GHz Characteristics NPN SILICON

8.4. Size:111K motorola
mrf6401r.pdf pdf_icon

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF6401/D The RF Line NPN Silicon MRF6401 RF Power Transistor The MRF6401 is designed for Class A common emitter, linear power amplifiers in the 1.0 2.0 GHz frequency range. It has been specifically designed for use in Personal Communications Network (PCN) base station and INMARSAT Standard M applications. Specifie

8.5. Size:228K motorola
mrf6404.pdf pdf_icon

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF6404/D The RF Line MRF6404 NPN Silicon RF Power Transistor The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to 30 W, 1.88 GHz 2.0 GHz. RF POWER TRANSISTOR Specified 26 Volts, 1.88 GHz Characteristics NPN SILICON Output Po

8.6. Size:69K motorola
mrf6401p.pdf pdf_icon

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF6401PHT/D The RF Line NPN Silicon MRF6401 RF Power Transistor PHOTOMASTER CASE 305C 02, STYLE 1 SOE200 PILL R4 R5 R6 + VCC R7 Q1 R8 R2 R3 C9 C10 C4 C3 TL11 TL10 C5 C6 C7 C8 TL6 TL4 C2 TL5 TL7 TL9 RF TL1 TL2 OUTPUT RF TP1 INPUT C1 DUT TL8 TL3 TL4 C1 1.5 pF, ATC Chip Capacitor 100A Q1 Tran

8.7. Size:228K motorola
mrf6404r.pdf pdf_icon

8.8. Size:276K motorola
mrf6404 mrf6404k.pdf pdf_icon

8.9. Size:273K motorola
mrf6409.pdf pdf_icon

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF6409/D The RF Line NPN Silicon MRF6409 RF Power Transistor The MRF6409 is designed for GSM base stations applications. It incorpo- rates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. To be used in Class AB Specified 26 Volts, 960 MHz Characteris

8.10. Size:120K motorola
mrf6402r.pdf pdf_icon