Справочник транзисторов. MRF6408

 

Биполярный транзистор MRF6408 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: MRF6408
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 60 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 24 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 4 V
   Макcимальный постоянный ток коллектора (Ic): 5 A
   Предельная температура PN-перехода (Tj): 200 °C
   Граничная частота коэффициента передачи тока (ft): 1990 MHz
   Ёмкость коллекторного перехода (Cc): 18 pf
   Статический коэффициент передачи тока (hfe): 20
   Корпус транзистора: CASE395C-01

 Аналоги (замена) для MRF6408

 

 

MRF6408 Datasheet (PDF)

 ..1. Size:268K  motorola
mrf6408.pdf

MRF6408
MRF6408

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF6408/DThe RF LineMRF6408NPN SiliconRF Power TransistorDesigned for PCN and PCS base station applications, the MRF6408incorporates high value emitter ballast resistors, gold metallizations and offers12 W, 2.0 GHza high degree of reliability and ruggedness.RF POWER TRANSISTOR To be used in class AB for PCN

 0.1. Size:268K  motorola
mrf6408r.pdf

MRF6408
MRF6408

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF6408/DThe RF LineMRF6408NPN SiliconRF Power TransistorDesigned for PCN and PCS base station applications, the MRF6408incorporates high value emitter ballast resistors, gold metallizations and offers12 W, 2.0 GHza high degree of reliability and ruggedness.RF POWER TRANSISTOR To be used in class AB for PCN

 0.2. Size:230K  motorola
mrf6408rev2.pdf

MRF6408
MRF6408

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF6408/DThe RF LineMRF6408NPN SiliconRF Power TransistorDesigned for PCN and PCS base station applications, the MRF6408incorporates high value emitter ballast resistors, gold metallizations and offers12 W, 2.0 GHza high degree of reliability and ruggedness.RF POWER TRANSISTOR To be used in class AB for PCN

 8.1. Size:120K  motorola
mrf6402.pdf

MRF6408
MRF6408

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF6402/DThe RF LineNPN SiliconMRF6402RF Power TransistorThe MRF6402 is designed for 1.8 GHz Personal Communications Network(PCN) base stations applications. It incorporates high value emitter ballastresistors, gold metallizations and offers a high degree of reliability andruggedness. For ease of design, this transi

 8.2. Size:153K  motorola
mrf6402rev7.pdf

MRF6408
MRF6408

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF6402/DThe RF LineNPN SiliconMRF6402RF Power TransistorThe MRF6402 is designed for 1.8 GHz Personal Communications Network(PCN) base stations applications. It incorporates high value emitter ballastresistors, gold metallizations and offers a high degree of reliability andruggedness. For ease of design, this transi

 8.3. Size:276K  motorola
mrf6404rev2.pdf

MRF6408
MRF6408

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF6404/DThe RF LineMRF6404NPN SiliconMRF6404KRF Power TransistorThe MRF6404 is designed for 26 volts microwave large signal, commonemitter, class AB linear amplifier applications operating in the range 1.8 to30 W, 1.88 GHz2.0 GHz.RF POWER TRANSISTOR Specified 26 Volts, 1.88 GHz Characteristics NPN SILICON

 8.4. Size:111K  motorola
mrf6401r.pdf

MRF6408
MRF6408

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF6401/DThe RF LineNPN SiliconMRF6401RF Power TransistorThe MRF6401 is designed for Class A common emitter, linear poweramplifiers in the 1.0 2.0 GHz frequency range. It has been specificallydesigned for use in Personal Communications Network (PCN) base station andINMARSAT Standard M applications. Specifie

 8.5. Size:228K  motorola
mrf6404.pdf

MRF6408
MRF6408

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF6404/DThe RF LineMRF6404NPN SiliconRF Power TransistorThe MRF6404 is designed for 26 volts microwave large signal, commonemitter, class AB linear amplifier applications operating in the range 1.8 to30 W, 1.88 GHz2.0 GHz.RF POWER TRANSISTOR Specified 26 Volts, 1.88 GHz Characteristics NPN SILICONOutput Po

 8.6. Size:69K  motorola
mrf6401p.pdf

MRF6408
MRF6408

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF6401PHT/DThe RF LineNPN SiliconMRF6401RF Power TransistorPHOTOMASTERCASE 305C02, STYLE 1SOE200PILLR4 R5 R6+VCCR7Q1R8R2 R3C9C10C4 C3 TL11TL10C5 C6 C7 C8TL6TL4C2TL5 TL7 TL9RFTL1 TL2OUTPUTRFTP1INPUTC1DUT TL8TL3 TL4C1 1.5 pF, ATC Chip Capacitor 100A Q1 Tran

 8.7. Size:228K  motorola
mrf6404r.pdf

MRF6408
MRF6408

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF6404/DThe RF LineMRF6404NPN SiliconRF Power TransistorThe MRF6404 is designed for 26 volts microwave large signal, commonemitter, class AB linear amplifier applications operating in the range 1.8 to30 W, 1.88 GHz2.0 GHz.RF POWER TRANSISTOR Specified 26 Volts, 1.88 GHz Characteristics NPN SILICONOutput Po

 8.8. Size:276K  motorola
mrf6404 mrf6404k.pdf

MRF6408
MRF6408

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF6404/DThe RF LineMRF6404NPN SiliconMRF6404KRF Power TransistorThe MRF6404 is designed for 26 volts microwave large signal, commonemitter, class AB linear amplifier applications operating in the range 1.8 to30 W, 1.88 GHz2.0 GHz.RF POWER TRANSISTOR Specified 26 Volts, 1.88 GHz Characteristics NPN SILICON

 8.9. Size:273K  motorola
mrf6409.pdf

MRF6408
MRF6408

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF6409/DThe RF LineNPN SiliconMRF6409RF Power TransistorThe MRF6409 is designed for GSM base stations applications. It incorpo-rates high value emitter ballast resistors, gold metallizations and offers a highdegree of reliability and ruggedness. To be used in Class AB Specified 26 Volts, 960 MHz Characteris

 8.10. Size:120K  motorola
mrf6402r.pdf

MRF6408
MRF6408

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF6402/DThe RF LineNPN SiliconMRF6402RF Power TransistorThe MRF6402 is designed for 1.8 GHz Personal Communications Network(PCN) base stations applications. It incorporates high value emitter ballastresistors, gold metallizations and offers a high degree of reliability andruggedness. For ease of design, this transi

 8.11. Size:273K  motorola
mrf6409rev0.pdf

MRF6408
MRF6408

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF6409/DThe RF LineNPN SiliconMRF6409RF Power TransistorThe MRF6409 is designed for GSM base stations applications. It incorpo-rates high value emitter ballast resistors, gold metallizations and offers a highdegree of reliability and ruggedness. To be used in Class AB Specified 26 Volts, 960 MHz Characteris

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