All Transistors. MRF6408 Datasheet

 

MRF6408 Datasheet and Replacement


   Type Designator: MRF6408
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 60 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 24 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 1990 MHz
   Collector Capacitance (Cc): 18 pF
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: CASE395C-01
 

 MRF6408 Substitution

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MRF6408 Datasheet (PDF)

 ..1. Size:268K  motorola
 mrf6408.pdf pdf_icon

MRF6408

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF6408/DThe RF LineMRF6408NPN SiliconRF Power TransistorDesigned for PCN and PCS base station applications, the MRF6408incorporates high value emitter ballast resistors, gold metallizations and offers12 W, 2.0 GHza high degree of reliability and ruggedness.RF POWER TRANSISTOR To be used in class AB for PCN

 0.1. Size:268K  motorola
 mrf6408r.pdf pdf_icon

MRF6408

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF6408/DThe RF LineMRF6408NPN SiliconRF Power TransistorDesigned for PCN and PCS base station applications, the MRF6408incorporates high value emitter ballast resistors, gold metallizations and offers12 W, 2.0 GHza high degree of reliability and ruggedness.RF POWER TRANSISTOR To be used in class AB for PCN

 0.2. Size:230K  motorola
 mrf6408rev2.pdf pdf_icon

MRF6408

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF6408/DThe RF LineMRF6408NPN SiliconRF Power TransistorDesigned for PCN and PCS base station applications, the MRF6408incorporates high value emitter ballast resistors, gold metallizations and offers12 W, 2.0 GHza high degree of reliability and ruggedness.RF POWER TRANSISTOR To be used in class AB for PCN

 8.1. Size:120K  motorola
 mrf6402.pdf pdf_icon

MRF6408

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF6402/DThe RF LineNPN SiliconMRF6402RF Power TransistorThe MRF6402 is designed for 1.8 GHz Personal Communications Network(PCN) base stations applications. It incorporates high value emitter ballastresistors, gold metallizations and offers a high degree of reliability andruggedness. For ease of design, this transi

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Datasheet: MRF5583 , MRF559 , MRF5812 , MRF5811LT1 , MRF5943 , MRF6402 , MRF6404 , MRF6404K , 2N5401 , MRF6409 , MRF653S , MRF837 , MRF8372R1 , MRF8372R2 , MRF847 , MRF857 , MRF858 .

Keywords - MRF6408 transistor datasheet

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