2SA88 datasheet, аналоги, основные параметры
Наименование производителя: 2SA88 📄📄
Тип материала: Ge
Полярность: PNP
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.08 W
Макcимально допустимое напряжение коллектор-база (Ucb): 30 V
Макcимальный постоянный ток коллектора (Ic): 0.01 A
Предельная температура PN-перехода (Tj): 85 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 40 MHz
Статический коэффициент передачи тока (hFE): 30
Корпус транзистора: TO44
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Аналоги (замена) для 2SA88
- подборⓘ биполярного транзистора по параметрам
2SA88 даташит
0.2. Size:63K panasonic
2sa885.pdf 
Power Transistors 2SA0885 (2SA885) 2SA0885 (2SA885) 2SA0885 (2SA885) 2SA0885 (2SA885) 2SA0885 (2SA885) Silicon PNP epitaxial planar type Unit mm For low-frequency power amplification 8.0+0.5 0.1 3.2 0.2 Complementary to 2SC1846 3.16 0.1 Features Output of 3 W can be obtained by a complementary pair with 2SC1846 TO-126B package which requires no insulation plat
0.5. Size:94K panasonic
2sa886.pdf 
Power Transistors 2SA0886 (2SA886) Silicon PNP epitaxial planar type For low-frequency power amplification Unit mm 8.0+0.5 0.1 3.2 0.2 Complementary to 2SC1847 3.16 0.1 Features Output of 4 W can be obtained by a complementary pair with 2SC1847 TO-126B package which requires no insulation plate for installa- tion to the heat sink Absolute Maximum Ratings
0.7. Size:201K jmnic
2sa885.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SA885 DESCRIPTION With TO-126 package Complement to type 2SC1846 Low collector-emitter saturation voltage APPLICATIONS For low-frequency power amplification PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute Maximun Ratings (Ta=25 ) SYMBOL PARAMETER CONDITIO
0.8. Size:97K jmnic
2sa882.pdf 
Product Specification www.jmnic.com Silicon PNP Power Transistors 2SA882 DESCRIPTION With TO-3 package Excellent Safe Operating Area APPLICATIONS For power and switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector
0.9. Size:169K jmnic
2sa887.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SA887 DESCRIPTION With TO-202 package Complement to type 2SC1848 APPLICATIONS Medium power amplifier PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-202) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base vo
0.10. Size:193K jmnic
2sa886.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SA886 DESCRIPTION With TO-126 package Complement to type 2SC1847 Low collector-emitter saturation voltage APPLICATIONS For low-frequency power amplification PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute Maximun Ratings (Ta=25 ) SYMBOL PARAMETER CONDITIO
0.11. Size:174K china
2sa885 3ca885.pdf 
2SA885(3CA885) PNP /SILICON PNP TRANSISTOR Purpose Medium power amplifier. V , 2SC1846(3DA1846) 3W CE(sat) Features Low V ,output of 3W can be obtained by a complementary pair with 2SC1846(3DA1846). CE(sat) /Absolute maximum ratings(Ta=25 ) Symbo
0.12. Size:229K inchange semiconductor
2sa885.pdf 
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA885 DESCRIPTION With TO-126 package Complement to type 2SC1846 Low collector-emitter saturation voltage APPLICATIONS For low-frequency power amplification PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute Maximun Ratings (Ta=25 ) SYMBOL P
0.13. Size:192K inchange semiconductor
2sa882.pdf 
isc Silicon PNP Power Transistor 2SA882 DESCRIPTION High Power Dissipation- P = 100W(Max.)@T =25 C C Collector-Emitter Breakdown Voltage- V = -130V(Min.) (BR)CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power and switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNI
0.14. Size:183K inchange semiconductor
2sa887.pdf 
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA887 DESCRIPTION With TO-202 package Complement to type 2SC1848 APPLICATIONS Medium power amplifier PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-202) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO
0.15. Size:222K inchange semiconductor
2sa886.pdf 
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA886 DESCRIPTION With TO-126 package Complement to type 2SC1847 Low collector-emitter saturation voltage APPLICATIONS For low-frequency power amplification PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute Maximun Ratings (Ta=25 ) SYMBOL P
Другие транзисторы: 2SA876, 2SA876H, 2SA876HA, 2SA876HB, 2SA876HC, 2SA877, 2SA878, 2SA879, SS8050, 2SA880, 2SA881, 2SA882, 2SA883, 2SA884, 2SA885, 2SA886, 2SA887
