All Transistors. 2SA88 Datasheet

 

2SA88 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SA88
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.08 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector Current |Ic max|: 0.01 A
   Max. Operating Junction Temperature (Tj): 85 °C
   Transition Frequency (ft): 40 MHz
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: TO44

 2SA88 Transistor Equivalent Substitute - Cross-Reference Search

   

2SA88 Datasheet (PDF)

 0.1. Size:105K  1
2sa881.pdf

2SA88
2SA88

 0.2. Size:63K  panasonic
2sa885.pdf

2SA88
2SA88

Power Transistors2SA0885 (2SA885)2SA0885 (2SA885)2SA0885 (2SA885)2SA0885 (2SA885)2SA0885 (2SA885)Silicon PNP epitaxial planar typeUnit: mmFor low-frequency power amplification8.0+0.50.13.20.2Complementary to 2SC1846 3.160.1 Features Output of 3 W can be obtained by a complementary pair with2SC1846 TO-126B package which requires no insulation plat

 0.3. Size:128K  panasonic
2sa880.pdf

2SA88
2SA88

 0.4. Size:121K  panasonic
2sa887.pdf

2SA88
2SA88

 0.5. Size:94K  panasonic
2sa886.pdf

2SA88
2SA88

Power Transistors2SA0886 (2SA886)Silicon PNP epitaxial planar typeFor low-frequency power amplificationUnit: mm8.0+0.50.13.20.2Complementary to 2SC1847 3.160.1 Features Output of 4 W can be obtained by a complementary pair with2SC1847 TO-126B package which requires no insulation plate for installa-tion to the heat sink Absolute Maximum Ratings

 0.6. Size:50K  no
2sa883.pdf

2SA88

 0.7. Size:201K  jmnic
2sa885.pdf

2SA88
2SA88

JMnic Product Specification Silicon PNP Power Transistors 2SA885 DESCRIPTION With TO-126 package Complement to type 2SC1846 Low collector-emitter saturation voltage APPLICATIONS For low-frequency power amplification PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute Maximun Ratings (Ta=25) SYMBOL PARAMETER CONDITIO

 0.8. Size:97K  jmnic
2sa882.pdf

2SA88
2SA88

Product Specification www.jmnic.com Silicon PNP Power Transistors 2SA882 DESCRIPTION With TO-3 package Excellent Safe Operating Area APPLICATIONS For power and switching applications PINNING PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector

 0.9. Size:169K  jmnic
2sa887.pdf

2SA88
2SA88

JMnic Product Specification Silicon PNP Power Transistors 2SA887 DESCRIPTION With TO-202 package Complement to type 2SC1848 APPLICATIONS Medium power amplifier PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-202) and symbol3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base vo

 0.10. Size:193K  jmnic
2sa886.pdf

2SA88
2SA88

JMnic Product Specification Silicon PNP Power Transistors 2SA886 DESCRIPTION With TO-126 package Complement to type 2SC1847 Low collector-emitter saturation voltage APPLICATIONS For low-frequency power amplification PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute Maximun Ratings (Ta=25) SYMBOL PARAMETER CONDITIO

 0.11. Size:174K  china
2sa885 3ca885.pdf

2SA88
2SA88

2SA885(3CA885) PNP /SILICON PNP TRANSISTOR : Purpose: Medium power amplifier. :V , 2SC1846(3DA1846) 3W CE(sat)Features: Low V ,output of 3W can be obtained by a complementary pair with 2SC1846(3DA1846). CE(sat)/Absolute maximum ratings(Ta=25) Symbo

 0.12. Size:229K  inchange semiconductor
2sa885.pdf

2SA88
2SA88

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA885 DESCRIPTION With TO-126 package Complement to type 2SC1846 Low collector-emitter saturation voltage APPLICATIONS For low-frequency power amplification PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute Maximun Ratings (Ta=25) SYMBOL P

 0.13. Size:192K  inchange semiconductor
2sa882.pdf

2SA88
2SA88

isc Silicon PNP Power Transistor 2SA882DESCRIPTIONHigh Power Dissipation-: P = 100W(Max.)@T =25C CCollector-Emitter Breakdown Voltage-: V = -130V(Min.)(BR)CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power and switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI

 0.14. Size:183K  inchange semiconductor
2sa887.pdf

2SA88
2SA88

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA887 DESCRIPTION With TO-202 package Complement to type 2SC1848 APPLICATIONS Medium power amplifier PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-202) and symbol3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO

 0.15. Size:222K  inchange semiconductor
2sa886.pdf

2SA88
2SA88

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA886 DESCRIPTION With TO-126 package Complement to type 2SC1847 Low collector-emitter saturation voltage APPLICATIONS For low-frequency power amplification PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute Maximun Ratings (Ta=25) SYMBOL P

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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