2SB276 Datasheet and Replacement

   Type Designator: 2SB276
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 12 W
   Maximum Collector-Base Voltage |Vcb|: 120 V
   Maximum Collector-Emitter Voltage |Vce|: 105 V
   Maximum Emitter-Base Voltage |Veb|: 1 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 75 °C
   Transition Frequency (ft): 0.4 MHz
   Forward Current Transfer Ratio (hFE), MIN: 35
   Noise Figure, dB: -
   Package: TO3
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