2SB333H Specs and Replacement

Type Designator: 2SB333H

Material of Transistor: Ge

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 80 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 55 V

Maximum Emitter-Base Voltage |Veb|: 40 V

Maximum Collector Current |Ic max|: 15 A

Max. Operating Junction Temperature (Tj): 100 °C

Electrical Characteristics

Transition Frequency (ft): 0.125 MHz

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: TO36

 2SB333H Substitution

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2SB333H datasheet

 9.1. Size:210K  inchange semiconductor

 2sb337.pdf pdf_icon

2SB333H

isc Silicon PNP Power Transistors 2SB337 DESCRIPTION Low Collector Saturation Voltage- V = -0.29V(Typ.) @I = -4A CE(sat) C High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector... See More ⇒

Detailed specifications: 2SB329, 2SB33, 2SB330, 2SB331, 2SB331H, 2SB332, 2SB332H, 2SB333, 2SB817, 2SB334, 2SB334H, 2SB335, 2SB336, 2SB337, 2SB337H, 2SB338, 2SB338H

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