2SB333H Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SB333H
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 80 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 55 V
Maximum Emitter-Base Voltage |Veb|: 40 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 100 °C
Transition Frequency (ft): 0.125 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO36
2SB333H Transistor Equivalent Substitute - Cross-Reference Search
2SB333H Datasheet (PDF)
9.1. Size:210K inchange semiconductor
2sb337.pdf
2sb337.pdf
isc Silicon PNP Power Transistors 2SB337DESCRIPTIONLow Collector Saturation Voltage-: V = -0.29V(Typ.) @I = -4ACE(sat) CHigh Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
