All Transistors. 2SB335 Datasheet

 

2SB335 Datasheet and Replacement


   Type Designator: 2SB335
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.083 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 12 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 0.06 A
   Max. Operating Junction Temperature (Tj): 75 °C
   Transition Frequency (ft): 0.4 MHz
   Forward Current Transfer Ratio (hFE), MIN: 70
   Noise Figure, dB: -
   Package: TO1
 

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2SB335 Datasheet (PDF)

 9.1. Size:210K  inchange semiconductor
 2sb337.pdf pdf_icon

2SB335

isc Silicon PNP Power Transistors 2SB337DESCRIPTIONLow Collector Saturation Voltage-: V = -0.29V(Typ.) @I = -4ACE(sat) CHigh Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector

Datasheet: 2SB331 , 2SB331H , 2SB332 , 2SB332H , 2SB333 , 2SB333H , 2SB334 , 2SB334H , 2SD669A , 2SB336 , 2SB337 , 2SB337H , 2SB338 , 2SB338H , 2SB339 , 2SB339H , 2SB34 .

History: 3N107 | MJF32C | DSA9G01 | BD265

Keywords - 2SB335 transistor datasheet

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