2SB335 Specs and Replacement

Type Designator: 2SB335

Material of Transistor: Ge

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.083 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 12 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 0.06 A

Max. Operating Junction Temperature (Tj): 75 °C

Electrical Characteristics

Transition Frequency (ft): 0.4 MHz

Forward Current Transfer Ratio (hFE), MIN: 70

Noise Figure, dB: -

Package: TO1

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2SB335 datasheet

 9.1. Size:210K  inchange semiconductor

 2sb337.pdf pdf_icon

2SB335

isc Silicon PNP Power Transistors 2SB337 DESCRIPTION Low Collector Saturation Voltage- V = -0.29V(Typ.) @I = -4A CE(sat) C High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector... See More ⇒

Detailed specifications: 2SB331, 2SB331H, 2SB332, 2SB332H, 2SB333, 2SB333H, 2SB334, 2SB334H, D880, 2SB336, 2SB337, 2SB337H, 2SB338, 2SB338H, 2SB339, 2SB339H, 2SB34

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