All Transistors. 2SB336 Datasheet

 

2SB336 Datasheet and Replacement


   Type Designator: 2SB336
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.083 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 12 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 0.06 A
   Max. Operating Junction Temperature (Tj): 75 °C
   Transition Frequency (ft): 0.4 MHz
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: TO1
 

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2SB336 Datasheet (PDF)

 9.1. Size:210K  inchange semiconductor
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2SB336

isc Silicon PNP Power Transistors 2SB337DESCRIPTIONLow Collector Saturation Voltage-: V = -0.29V(Typ.) @I = -4ACE(sat) CHigh Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector

Datasheet: 2SB331H , 2SB332 , 2SB332H , 2SB333 , 2SB333H , 2SB334 , 2SB334H , 2SB335 , S9013 , 2SB337 , 2SB337H , 2SB338 , 2SB338H , 2SB339 , 2SB339H , 2SB34 , 2SB340 .

History: CSC4115 | 2SC1119 | 2SC403CS | 2SC400G | 2SC404 | 2SC5223 | 2SC4018

Keywords - 2SB336 transistor datasheet

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