2SB406 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SB406
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 37 W
Maximum Collector-Base Voltage |Vcb|: 200 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 100 °C
Transition Frequency (ft): 0.3 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO3
2SB406 Transistor Equivalent Substitute - Cross-Reference Search
2SB406 Datasheet (PDF)
9.1. Size:203K inchange semiconductor
2sb407.pdf
2sb407.pdf
isc Silicon PNP Power Transistor 2SB407DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -30V(Min)CEO(SUS)Low Collector Saturation Voltage-: V = -1.0V(Max.) @I = -6ACE(sat) CWide area of safe operationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RATI
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP42 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: 2SB200 | 2SA899 | 2N4036
