2SB406 Specs and Replacement
Type Designator: 2SB406
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 37 W
Maximum Collector-Base Voltage |Vcb|: 200 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 100 °C
Electrical Characteristics
Transition Frequency (ft): 0.3 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO3
2SB406 Substitution
- BJT ⓘ Cross-Reference Search
2SB406 datasheet
isc Silicon PNP Power Transistor 2SB407 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -30V(Min) CEO(SUS) Low Collector Saturation Voltage- V = -1.0V(Max.) @I = -6A CE(sat) C Wide area of safe operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. ABSOLUTE MAXIMUM RATI... See More ⇒
Detailed specifications: 2SB400, 2SB401, 2SB402, 2SB403, 2SB404, 2SB405, 2SB405K, 2SB405ST, 2N4401, 2SB407, 2SB408, 2SB409, 2SB41, 2SB410, 2SB410AF, 2SB410S, 2SB411
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