2SB409 Specs and Replacement

Type Designator: 2SB409

Material of Transistor: Ge

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 12 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 75 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO1

 2SB409 Substitution

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2SB409 datasheet

 9.1. Size:203K  inchange semiconductor

 2sb407.pdf pdf_icon

2SB409

isc Silicon PNP Power Transistor 2SB407 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -30V(Min) CEO(SUS) Low Collector Saturation Voltage- V = -1.0V(Max.) @I = -6A CE(sat) C Wide area of safe operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. ABSOLUTE MAXIMUM RATI... See More ⇒

Detailed specifications: 2SB403, 2SB404, 2SB405, 2SB405K, 2SB405ST, 2SB406, 2SB407, 2SB408, NJW0281G, 2SB41, 2SB410, 2SB410AF, 2SB410S, 2SB411, 2SB411AF, 2SB411S, 2SB412

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