All Transistors. 2SB444H Datasheet

 

2SB444H Datasheet and Replacement


   Type Designator: 2SB444H
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.1 W
   Maximum Collector-Base Voltage |Vcb|: 18 V
   Maximum Collector-Emitter Voltage |Vce|: 12 V
   Maximum Emitter-Base Voltage |Veb|: 12 V
   Maximum Collector Current |Ic max|: 0.01 A
   Max. Operating Junction Temperature (Tj): 85 °C
   Transition Frequency (ft): 1 MHz
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: TO1
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2SB444H Datasheet (PDF)

 9.1. Size:203K  inchange semiconductor
 2sb449.pdf pdf_icon

2SB444H

isc Silicon PNP Power Transistor 2SB449DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -50V(Min)CEO(SUS)Low Collector Saturation Voltage-: V = -0.7V(Max.) @I = -3ACE(sat) CWide area of safe operationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier,switching and DC-DCconverters appl

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 3DD4617H | BSR40 | DTA123EET1G | ESM2060 | MP602 | 2SD2070 | 2SB1216T-TL-H

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