2SB449 Specs and Replacement

Type Designator: 2SB449

Material of Transistor: Ge

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 22 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 32 V

Maximum Emitter-Base Voltage |Veb|: 20 V

Maximum Collector Current |Ic max|: 3.5 A

Max. Operating Junction Temperature (Tj): 100 °C

Electrical Characteristics

Transition Frequency (ft): 0.2 MHz

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO3

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2SB449 datasheet

 ..1. Size:203K  inchange semiconductor

 2sb449.pdf pdf_icon

2SB449

isc Silicon PNP Power Transistor 2SB449 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -50V(Min) CEO(SUS) Low Collector Saturation Voltage- V = -0.7V(Max.) @I = -3A CE(sat) C Wide area of safe operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier,switching and DC-DC converters appl... See More ⇒

Detailed specifications: 2SB444, 2SB444A, 2SB444B, 2SB444H, 2SB445, 2SB446, 2SB447, 2SB448, MJE340, 2SB450, 2SB450A, 2SB451, 2SB452, 2SB452A, 2SB453, 2SB454, 2SB455

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