2SB449 Specs and Replacement
Type Designator: 2SB449
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 22 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 32 V
Maximum Emitter-Base Voltage |Veb|: 20 V
Maximum Collector Current |Ic max|: 3.5 A
Max. Operating Junction Temperature (Tj): 100 °C
Electrical Characteristics
Transition Frequency (ft): 0.2 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO3
2SB449 Substitution
- BJT ⓘ Cross-Reference Search
2SB449 datasheet
isc Silicon PNP Power Transistor 2SB449 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -50V(Min) CEO(SUS) Low Collector Saturation Voltage- V = -0.7V(Max.) @I = -3A CE(sat) C Wide area of safe operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier,switching and DC-DC converters appl... See More ⇒
Detailed specifications: 2SB444, 2SB444A, 2SB444B, 2SB444H, 2SB445, 2SB446, 2SB447, 2SB448, MJE340, 2SB450, 2SB450A, 2SB451, 2SB452, 2SB452A, 2SB453, 2SB454, 2SB455
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