2SB570 PDF and Equivalents Search

 

2SB570 Specs and Replacement

   Type Designator: 2SB570
   Material of Transistor: Si
   Polarity: PNP

Absolute Maximum Ratings

   Maximum Collector Power Dissipation (Pc): 40 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 4 A
   Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

   Forward Current Transfer Ratio (hFE), MIN: 6000
   Noise Figure, dB: -
   Package: TO126
     - BJT ⓘ Cross-Reference Search