2SB709 Specs and Replacement
Type Designator: 2SB709
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Transition Frequency (ft): 40 MHz
Collector Capacitance (Cc): 2.7 pF
Forward Current Transfer Ratio (hFE), MIN: 90
Package: TO236
2SB709 Substitution
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2SB709 datasheet
Transistor 2SB709A Silicon PNP epitaxial planer type For general amplification Unit mm Complementary to 2SD601A +0.2 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features High foward current transfer ratio hFE. Mini type package, allowing downsizing of the equipment and 1 automatic insertion through the tape packing and the magazine 3 packing. 2 Absolute Maximum Ratin... See More ⇒
Transistors 2SB0709A (2SB709A) Silicon PNP epitaxial planar type For general amplification Unit mm Complementary to 2SD0601A (2SD601A) 0.40+0.10 0.05 0.16+0.10 0.06 3 Features High forward current transfer ratio hFE Mini type package, allowing downsizing of the equipment and 1 2 automatic insertion through the tape packing and the magazine (0.95) (0.95) packi... See More ⇒
2SB709A -0.2A , -45V PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free FEATURES SOT-23 For general amplification A Complementary of the 2SD601A L 3 3 Top View C B CLASSIFICATION OF hFE 1 1 2 Product-Rank 2SB709A-Q 2SB709A-R 2SB709A-S 2 K E Range 160 260 210 340 290 460 ... See More ⇒
Detailed specifications: 2SB703A , 2SB705 , 2SB705A , 2SB705B , 2SB706 , 2SB706A , 2SB707 , 2SB708 , D965 , 2SB709A , 2SB71 , 2SB710 , 2SB710A , 2SB711 , 2SB712 , 2SB713 , 2SB714 .
History: MMBTA94-MS | MMBT9012H
Keywords - 2SB709 pdf specs
2SB709 cross reference
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History: MMBTA94-MS | MMBT9012H
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