2SB709 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SB709
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-base (Vcb): 25 V
Tensión colector-emisor (Vce): 25 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 125 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 40 MHz
Capacitancia de salida (Cc): 2.7 pF
Ganancia de corriente contínua (hfe): 90
Paquete / Cubierta: TO236
Búsqueda de reemplazo de transistor bipolar 2SB709
2SB709 Datasheet (PDF)
2sb709a e.pdf
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Transistor2SB709ASilicon PNP epitaxial planer typeFor general amplificationUnit: mmComplementary to 2SD601A+0.22.8 0.3+0.250.65 0.15 1.5 0.05 0.65 0.15FeaturesHigh foward current transfer ratio hFE.Mini type package, allowing downsizing of the equipment and1automatic insertion through the tape packing and the magazine3packing.2Absolute Maximum Ratin
2sb709a.pdf
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Transistors2SB0709A (2SB709A)Silicon PNP epitaxial planar typeFor general amplificationUnit: mmComplementary to 2SD0601A (2SD601A)0.40+0.100.050.16+0.100.063 Features High forward current transfer ratio hFE Mini type package, allowing downsizing of the equipment and1 2automatic insertion through the tape packing and the magazine(0.95) (0.95)packi
2sb709a.pdf
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2SB709A -0.2A , -45V PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free FEATURES SOT-23 For general amplification A Complementary of the 2SD601A L33Top ViewC BCLASSIFICATION OF hFE 11 2Product-Rank 2SB709A-Q 2SB709A-R 2SB709A-S 2K ERange 160~260 210~340 290~460
2sb709a.pdf
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-23 Plastic-Encapsulate Transistors SOT-23 2SB709A TRANSISTOR (PNP) FEATURES 1. BASE For general amplification 2. EMITTER Complementary to 2SD601A 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitCollector-Base Voltage VCBO -45 VCollector-Emitter Voltage VCEO
2sb709a.pdf
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2SB7 09ATRANSISTOR(PNP) SOT-23 FEATURES 1. BASE For general amplification 2. EMITTER Complementary to 2SD601A 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsCollector-Base Voltage VCBO -45 VCollector-Emitter Voltage VCEO -45 VEmitter-Base Voltage VEBO -7 VCollector Current -Continuous IC -100 mACollector Power
2sb709a sot-23.pdf
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2SB709A SOT-23 Transistor(PNP)1. BASE SOT-232. EMITTER 3. COLLECTOR Features For general amplification Complementary to 2SD601A MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsCollector-Base Voltage VCBO -45 VCollector-Emitter Voltage VCEO -45 V Dimensions in inches and (millimeters)Emitter-Base Voltage VEBO -7 VCollector Curre
2sb709a.pdf
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SMD Type TransistorsPNP Transistors2SB709ASOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.1 Features 3 For general amplification Complimentary to 2SD601A.1 2+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -45 Collector - Emitter Voltage
2sb709lt1.pdf
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2SB709LT1 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQRENCY,LOW NOISE AMPLIFIER Package:SOT-23 * Complement to 2SD601LT1 * Collector Current: Ic= -100mA * Collector-Emitter Voltage:Vce= -45V ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol Rating UnitCollector-Base Voltage Vcbo -50 V PIN: 1 2 3Collector-Emitter Voltage Vceo -45 V STYLE Emitter-Base Voltage Vebo -5
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
![2SB709](https://alltransistors.com/images/us.png)
![2SB709](https://alltransistors.com/images/es.png)
![2SB709](https://alltransistors.com/images/ru.png)
Liste
Recientemente añadidas las descripciónes de los transistores:
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