Биполярный транзистор 2SB709 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SB709
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.2 W
Макcимально допустимое напряжение коллектор-база (Ucb): 25 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 25 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 125 °C
Граничная частота коэффициента передачи тока (ft): 40 MHz
Ёмкость коллекторного перехода (Cc): 2.7 pf
Статический коэффициент передачи тока (hfe): 90
Корпус транзистора: TO236
2SB709 Datasheet (PDF)
2sb709a e.pdf
Transistor2SB709ASilicon PNP epitaxial planer typeFor general amplificationUnit: mmComplementary to 2SD601A+0.22.8 0.3+0.250.65 0.15 1.5 0.05 0.65 0.15FeaturesHigh foward current transfer ratio hFE.Mini type package, allowing downsizing of the equipment and1automatic insertion through the tape packing and the magazine3packing.2Absolute Maximum Ratin
2sb709a.pdf
Transistors2SB0709A (2SB709A)Silicon PNP epitaxial planar typeFor general amplificationUnit: mmComplementary to 2SD0601A (2SD601A)0.40+0.100.050.16+0.100.063 Features High forward current transfer ratio hFE Mini type package, allowing downsizing of the equipment and1 2automatic insertion through the tape packing and the magazine(0.95) (0.95)packi
2sb709a.pdf
2SB709A -0.2A , -45V PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free FEATURES SOT-23 For general amplification A Complementary of the 2SD601A L33Top ViewC BCLASSIFICATION OF hFE 11 2Product-Rank 2SB709A-Q 2SB709A-R 2SB709A-S 2K ERange 160~260 210~340 290~460
2sb709a.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-23 Plastic-Encapsulate Transistors SOT-23 2SB709A TRANSISTOR (PNP) FEATURES 1. BASE For general amplification 2. EMITTER Complementary to 2SD601A 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitCollector-Base Voltage VCBO -45 VCollector-Emitter Voltage VCEO
2sb709a.pdf
2SB7 09ATRANSISTOR(PNP) SOT-23 FEATURES 1. BASE For general amplification 2. EMITTER Complementary to 2SD601A 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsCollector-Base Voltage VCBO -45 VCollector-Emitter Voltage VCEO -45 VEmitter-Base Voltage VEBO -7 VCollector Current -Continuous IC -100 mACollector Power
2sb709a sot-23.pdf
2SB709A SOT-23 Transistor(PNP)1. BASE SOT-232. EMITTER 3. COLLECTOR Features For general amplification Complementary to 2SD601A MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsCollector-Base Voltage VCBO -45 VCollector-Emitter Voltage VCEO -45 V Dimensions in inches and (millimeters)Emitter-Base Voltage VEBO -7 VCollector Curre
2sb709a.pdf
SMD Type TransistorsPNP Transistors2SB709ASOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.1 Features 3 For general amplification Complimentary to 2SD601A.1 2+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -45 Collector - Emitter Voltage
2sb709lt1.pdf
2SB709LT1 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQRENCY,LOW NOISE AMPLIFIER Package:SOT-23 * Complement to 2SD601LT1 * Collector Current: Ic= -100mA * Collector-Emitter Voltage:Vce= -45V ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol Rating UnitCollector-Base Voltage Vcbo -50 V PIN: 1 2 3Collector-Emitter Voltage Vceo -45 V STYLE Emitter-Base Voltage Vebo -5
Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050