2SB734 Specs and Replacements, Transistor Equivalent Finder, Cross Reference. AllTransistors.com

2SB734 Specs and Replacement

   Type Designator: 2SB734
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 50 MHz
   Collector Capacitance (Cc): 23 pF
   Forward Current Transfer Ratio (hFE), MIN: 135
   Noise Figure, dB: -
   Package: SP8

2SB734 Transistor Equivalent Substitute - Cross-Reference Search

2SB734 detailed specifications

..1. Size:166K nec
2sb734.pdf pdf_icon

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9.1. Size:183K nec
2sb736 2sb736 2sb736a.pdf pdf_icon

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9.2. Size:164K nec
2sb733.pdf pdf_icon

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9.3. Size:1246K rohm
2sb737 2sb821.pdf pdf_icon

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9.4. Size:31K hitachi
2sb738 2sb739.pdf pdf_icon

2SB738, 2SB739 Silicon PNP Epitaxial Application Low frequency power amplifier Complementary pair with 2SD787 and 2SD788 Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SB738, 2SB739 Absolute Maximum Ratings (Ta = 25 C) Item Symbol 2SB738 2SB739 Unit Collector to base voltage VCBO 20 20 V Collector to emitter voltage VCEO 16 20 V Emitter to base v... See More ⇒

9.5. Size:39K no
2sb731.pdf pdf_icon

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9.6. Size:1155K kexin
2sb736a.pdf pdf_icon

SMD Type Transistors PNP Transistors 2SB736A SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 Features 3 High DC current gain hFE 200(TYP) Complimentary to 2SD780A. 1 2 +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -80 Collector - Emitter... See More ⇒

9.7. Size:1127K kexin
2sb736.pdf pdf_icon

SMD Type Transistors PNP Transistors 2SB736 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 Features 3 High DC current gain hFE 200(TYP) Complimentary to 2SD780. 1 2 +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter V... See More ⇒

9.8. Size:187K inchange semiconductor
2sb731.pdf pdf_icon

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB731 DESCRIPTION Collector-Emitter Sustaining Voltage - V = -50V(Min) CEO(SUS) Low Collector to Emitter Saturation Voltage V = -0.6V(Max.)@I = -1A CE(sat) C DC Current Gain- h = 135-600@I = -0.1A FE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed fo... See More ⇒

Detailed specifications: 2SB724 , 2SB725 , 2SB726 , 2SB727 , 2SB727K , 2SB73 , 2SB731 , 2SB733 , BD222 , 2SB736 , 2SB736A , 2SB736AR , 2SB736BW1 , 2SB736BW2 , 2SB736BW3 , 2SB736BW4 , 2SB736BW5 .

Keywords - 2SB734 transistor specs

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BJT: GA1A4M | SBT42 | 2SA200-Y

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