2SB798DM Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SB798DM
SMD Transistor Code: DM
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 2 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 160 °C
Transition Frequency (ft): 55 MHz
Collector Capacitance (Cc): 36 pF
Forward Current Transfer Ratio (hFE), MIN: 90
Noise Figure, dB: -
Package: SOT89
2SB798DM Transistor Equivalent Substitute - Cross-Reference Search
2SB798DM Datasheet (PDF)
2sb798dl 2sb798dk.pdf
2SB798PNP-Silicon General use Transistors4 1W 1.0A25V 32 1 2 1 3SOT-89 ApplicationsCan be used for switching and amplifying in various 1 Base 2/4 Collector 3 Emitter electrical and electronic circuit. Maximum ratings Parameters Symbol Rating UnitV VCEO 25Collector-emitter voltage (IB=0) VCBO 30 VCollector-base voltageIE=0 VEBO 6 VEmitter-
2sb798.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SB798 P NP EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR DESCRIPTION 1The UTC 2SB798 is designed for audio frequency power amplifier applications, especially in Hybrid Integrated Circuits. FEATURES * Low Collector Saturation Voltage: VCE(sat)
2sb798.pdf
SMD Type TransistorsPNP Transistors2SB7981.70 0.1 Features Low Collector Saturation Voltage: VCE(sat)
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
