All Transistors. 2SB798DM Datasheet

 

2SB798DM Datasheet and Replacement


   Type Designator: 2SB798DM
   SMD Transistor Code: DM
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 2 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 160 °C
   Transition Frequency (ft): 55 MHz
   Collector Capacitance (Cc): 36 pF
   Forward Current Transfer Ratio (hFE), MIN: 90
   Noise Figure, dB: -
   Package: SOT89
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2SB798DM Datasheet (PDF)

 7.1. Size:835K  cn shikues
 2sb798dl 2sb798dk.pdf pdf_icon

2SB798DM

2SB798PNP-Silicon General use Transistors4 1W 1.0A25V 32 1 2 1 3SOT-89 ApplicationsCan be used for switching and amplifying in various 1 Base 2/4 Collector 3 Emitter electrical and electronic circuit. Maximum ratings Parameters Symbol Rating UnitV VCEO 25Collector-emitter voltage (IB=0) VCBO 30 VCollector-base voltageIE=0 VEBO 6 VEmitter-

 8.1. Size:221K  nec
 2sb798.pdf pdf_icon

2SB798DM

 8.2. Size:175K  utc
 2sb798.pdf pdf_icon

2SB798DM

UNISONIC TECHNOLOGIES CO., LTD 2SB798 P NP EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR DESCRIPTION 1The UTC 2SB798 is designed for audio frequency power amplifier applications, especially in Hybrid Integrated Circuits. FEATURES * Low Collector Saturation Voltage: VCE(sat)

 8.3. Size:1353K  kexin
 2sb798.pdf pdf_icon

2SB798DM

SMD Type TransistorsPNP Transistors2SB7981.70 0.1 Features Low Collector Saturation Voltage: VCE(sat)

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Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: 2SC4300 | 2SB400 | 2SC2731 | ECG478 | 2N5944 | SL493TA | 2N4946

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