2SB824Q Specs and Replacement

Type Designator: 2SB824Q

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 30 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 15 MHz

Forward Current Transfer Ratio (hFE), MIN: 70

Noise Figure, dB: -

Package: TO220

 2SB824Q Substitution

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2SB824Q datasheet

 8.1. Size:113K  sanyo

 2sb824.pdf pdf_icon

2SB824Q

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 8.2. Size:206K  jmnic

 2sb824.pdf pdf_icon

2SB824Q

JMnic Product Specification Silicon PNP Power Transistors 2SB824 DESCRIPTION With TO-220 package Low collector-emitter saturation voltage Complement to type 2SD1060 APPLICATIONS Suitable for relay drivers,high-speed Inverters,converters,and other general large-current switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting ... See More ⇒

 8.3. Size:218K  inchange semiconductor

 2sb824.pdf pdf_icon

2SB824Q

isc Silicon PNP Power Transistor 2SB824 DESCRIPTION High Collector Current I = -5A C Low Collector Saturation Voltage V = -0.4V(Max)@I = -3A CE(sat) C Wide Area of Safe Operation Complement to Type 2SD1060 APPLICATIONS Designed for relay drivers, high-speed inverters, converters, and other gereral large-current switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) ... See More ⇒

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Detailed specifications: 2SB818, 2SB819, 2SB82, 2SB820, 2SB821, 2SB822, 2SB823, 2SB824, 2N4401, 2SB824R, 2SB824S, 2SB825, 2SB825Q, 2SB825R, 2SB825S, 2SB826, 2SB826Q

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