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2SB849 Specs and Replacement

Type Designator: 2SB849

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 80 W

Maximum Collector-Base Voltage |Vcb|: 120 V

Maximum Collector-Emitter Voltage |Vce|: 120 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 7 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 7 MHz

Collector Capacitance (Cc): 340 pF

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: TO218

 2SB849 Substitution

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2SB849 datasheet

 ..1. Size:152K  jmnic

2sb849.pdf pdf_icon

2SB849

JMnic Product Specification Silicon PNP Power Transistors 2SB849 DESCRIPTION With TO-3PFa package Complement to type 2SD1110 Wide area of safe operation APPLICATIONS For use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collec... See More ⇒

 ..2. Size:122K  inchange semiconductor

2sb849.pdf pdf_icon

2SB849

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB849 DESCRIPTION With TO-3PFa package Complement to type 2SD1110 Wide area of safe operation APPLICATIONS For use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE ... See More ⇒

 0.1. Size:105K  inchange semiconductor

2sb849a.pdf pdf_icon

2SB849

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB849A DESCRIPTION With TO-3PFa package Complement to type 2SD1110A Wide area of safe operation APPLICATIONS For use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALU... See More ⇒

 9.1. Size:192K  inchange semiconductor

2sb848.pdf pdf_icon

2SB849

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB848 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO Good Linearity of h FE 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETE... See More ⇒

Detailed specifications: 2SB841L , 2SB842 , 2SB842L , 2SB843 , 2SB844 , 2SB845 , 2SB846 , 2SB848 , D882 , 2SB849A , 2SB85 , 2SB850 , 2SB850A , 2SB851 , 2SB852 , 2SB852UA , 2SB852UB .

History: 2SC2336B

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History: 2SC2336B

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