2SB849 Datasheet, Equivalent, Cross Reference Search

   Type Designator: 2SB849
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 80 W
   Maximum Collector-Base Voltage |Vcb|: 120 V
   Maximum Collector-Emitter Voltage |Vce|: 120 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 7 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 7 MHz
   Collector Capacitance (Cc): 340 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: TO218

2SB849 Transistor Equivalent Substitute - Cross-Reference Search

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