2SB849 Todos los transistores

 

2SB849 Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SB849
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 80 W
   Tensión colector-base (Vcb): 120 V
   Tensión colector-emisor (Vce): 120 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 7 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 7 MHz
   Capacitancia de salida (Cc): 340 pF
   Ganancia de corriente contínua (hfe): 120
   Paquete / Cubierta: TO218
 

 Búsqueda de reemplazo de 2SB849

   - Selección ⓘ de transistores por parámetros

 

2SB849 datasheet

 ..1. Size:152K  jmnic
 2sb849.pdf pdf_icon

2SB849

JMnic Product Specification Silicon PNP Power Transistors 2SB849 DESCRIPTION With TO-3PFa package Complement to type 2SD1110 Wide area of safe operation APPLICATIONS For use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collec... See More ⇒

 ..2. Size:122K  inchange semiconductor
 2sb849.pdf pdf_icon

2SB849

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB849 DESCRIPTION With TO-3PFa package Complement to type 2SD1110 Wide area of safe operation APPLICATIONS For use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE ... See More ⇒

 0.1. Size:105K  inchange semiconductor
 2sb849a.pdf pdf_icon

2SB849

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB849A DESCRIPTION With TO-3PFa package Complement to type 2SD1110A Wide area of safe operation APPLICATIONS For use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALU... See More ⇒

 9.1. Size:192K  inchange semiconductor
 2sb848.pdf pdf_icon

2SB849

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB848 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO Good Linearity of h FE 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETE... See More ⇒

SHOW MORE

Otros transistores... 2SB841L , 2SB842 , 2SB842L , 2SB843 , 2SB844 , 2SB845 , 2SB846 , 2SB848 , D882 , 2SB849A , 2SB85 , 2SB850 , 2SB850A , 2SB851 , 2SB852 , 2SB852UA , 2SB852UB .

 

 
Back to Top

 


 
.