2SB930 Datasheet. Specs and Replacement
Type Designator: 2SB930 📄📄
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO218
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2SB930 datasheet
..1. Size:49K panasonic
2sb930.pdf 
Power Transistors 2SB930, 2SB930A Silicon PNP epitaxial planar type Unit mm 8.5 0.2 3.4 0.3 6.0 0.5 1.0 0.1 For power amplification Complementary to 2SD1253 and 2SD1253A Features 1.5max. 1.1max. High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) 0.8 0.1 0.5max. N type package enabling direct solder... See More ⇒
..2. Size:1124K kexin
2sb930.pdf
SMD Type Transistors PNP Transistors 2SB930 TO-252 Unit mm Features +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 High forward current transfer ratio hFE 0.50 -0.7 which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Complementary to 2SD1253 0.127 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4.60 -0.15 2 Co... See More ⇒
0.1. Size:1128K kexin
2sb930a.pdf
SMD Type Transistors PNP Transistors 2SB930A TO-252 Unit mm Features +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 High forward current transfer ratio hFE 0.50 -0.7 which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Complementary to 2SD1253A 0.127 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4.60 -0.15 2 ... See More ⇒
9.1. Size:57K panasonic
2sb933.pdf
Power Transistors 2SB933 Silicon PNP epitaxial planar type Unit mm 8.5 0.2 3.4 0.3 For power switching 6.0 0.5 1.0 0.1 Complementary to 2SD1256 Features 1.5max. 1.1max. Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE 0.8 0.1 0.5max. Large collector current IC 2.54 0.3 N type package enabling direct sold... See More ⇒
9.3. Size:57K panasonic
2sb931.pdf
Power Transistors 2SB931 Silicon PNP epitaxial planar type Unit mm 8.5 0.2 3.4 0.3 For power switching 6.0 0.5 1.0 0.1 Complementary to 2SD1254 Features 1.5max. 1.1max. Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE 0.8 0.1 0.5max. Large collector current IC 2.54 0.3 N type package enabling direct sold... See More ⇒
9.4. Size:58K panasonic
2sb932.pdf
Power Transistors 2SB932 Silicon PNP epitaxial planar type Unit mm 8.5 0.2 3.4 0.3 For power switching 6.0 0.5 1.0 0.1 Complementary to 2SD1255 Features 1.5max. 1.1max. Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE 0.8 0.1 0.5max. Large collector current IC 2.54 0.3 N type package enabling direct sold... See More ⇒
9.7. Size:96K panasonic
2sb936.pdf
Power Transistors 2SB0936 (2SB936), 2SB0936A (2SB936A) Silicon PNP epitaxial planar type For low-voltage switching Unit mm Features 8.5 0.2 3.4 0.3 6.0 0.2 1.0 0.1 Low collector-emitter saturation voltage VCE(sat) High-speed switching N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 0 ... See More ⇒
9.8. Size:73K panasonic
2sb939.pdf
Power Transistors 2SB939, 2SB939A Silicon PNP epitaxial planar type Darlington Unit mm For midium-speed power switching 8.5 0.2 3.4 0.3 6.0 0.5 1.0 0.1 Complementary to 2SD1262 and 2SD1262A Features High foward current transfer ratio hFE 1.5max. 1.1max. High-speed switching N type package enabling direct soldering of the radiating fin to 0.8 0.1 0.5max. the printed circu... See More ⇒
9.9. Size:58K panasonic
2sb935.pdf
Power Transistors 2SB935, 2SB935A Silicon PNP epitaxial planar type Unit mm 8.5 0.2 3.4 0.3 6.0 0.5 1.0 0.1 For low-voltage switching Features Low collector to emitter saturation voltage VCE(sat) 1.5max. 1.1max. High-speed switching N type package enabling direct soldering of the radiating fin to 0.8 0.1 0.5max. the printed circuit board, etc. of small electronic equipmen... See More ⇒
9.10. Size:1176K kexin
2sb933.pdf
SMD Type Transistors PNP Transistors 2SB933 TO-252 Unit mm +0.15 6.50-0.15 +0.1 Features 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC 0.127 +0.1 Complementary to 2SD1256 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.1... See More ⇒
9.11. Size:1181K kexin
2sb931.pdf
SMD Type Transistors PNP Transistors 2SB931 TO-252 Unit mm +0.15 6.50-0.15 +0.1 Features 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC 0.127 +0.1 Complementary to 2SD1254 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 ... See More ⇒
9.12. Size:1192K kexin
2sb932.pdf
SMD Type Transistors PNP Transistors 2SB932 TO-252 Unit mm +0.15 6.50-0.15 +0.1 Features 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC 0.127 +0.1 Complementary to 2SD1255 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.1... See More ⇒
9.13. Size:1231K kexin
2sb936a.pdf
SMD Type Transistors PNP Transistors 2SB936A TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Features Low collector to emitter saturation voltage VCE(sat) High-speed switching 0.127 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4 .60 -0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rati... See More ⇒
9.14. Size:1185K kexin
2sb934.pdf
SMD Type Transistors PNP Transistors 2SB934 TO-252 Unit mm +0.15 6.50-0.15 +0.1 Features 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC 0.127 +0.1 Complementary to 2SD1257 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.1... See More ⇒
9.15. Size:1216K kexin
2sb936.pdf
SMD Type Transistors PNP Transistors 2SB936 TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Features Low collector to emitter saturation voltage VCE(sat) High-speed switching 0.127 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4 .60 -0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Ratin... See More ⇒
9.16. Size:1210K kexin
2sb935a.pdf
SMD Type Transistors PNP Transistors 2SB935A TO-252 Unit mm +0.15 6.50-0.15 +0.1 Features 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Low collector to emitter saturation voltage VCE(sat) High-speed switching 0.127 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4.60 -0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Ratin... See More ⇒
9.17. Size:1194K kexin
2sb935.pdf
SMD Type Transistors PNP Transistors 2SB935 TO-252 Unit mm +0.15 6.50-0.15 +0.1 Features 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Low collector to emitter saturation voltage VCE(sat) High-speed switching 0.127 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4.60 -0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating... See More ⇒
Detailed specifications: 2SB927S, 2SB927T, 2SB927U, 2SB928, 2SB928A, 2SB929, 2SB929A, 2SB93, TIP142, 2SB930A, 2SB931, 2SB932, 2SB933, 2SB934, 2SB935, 2SB935A, 2SB936
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