All Transistors. 2SC1173G Datasheet

 

2SC1173G Datasheet and Replacement


   Type Designator: 2SC1173G
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 25 W
   Maximum Collector-Base Voltage |Vcb|: 45 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 1 MHz
   Collector Capacitance (Cc): 300 pF
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: TO220
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2SC1173G Datasheet (PDF)

 7.1. Size:93K  toshiba
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2SC1173G

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 7.2. Size:154K  jmnic
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2SC1173G

JMnic Product Specification Silicon NPN Power Transistors 2SC1173 DESCRIPTION With TO-220 package Complement to type 2SA473 Collector current :IC=3A Collector dissipation:PC=10W@TC=25 APPLICATIONS Low frequency power amplifier Power regulator PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings (T

 7.3. Size:192K  inchange semiconductor
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2SC1173G

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1173DESCRIPTIONLow Collector Saturation VoltageComplement to Type 2SA473100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsCar radio,car stereo output stage amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)

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Keywords - 2SC1173G transistor datasheet

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