2N1666 Specs and Replacement
Type Designator: 2N1666
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 32 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 90 °C
Electrical Characteristics
Transition Frequency (ft): 0.1 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Package: TO3
2N1666 Substitution
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2N1666 datasheet
Detailed specifications: 2N1659A-13, 2N166, 2N1660, 2N1661, 2N1662, 2N1663, 2N1664, 2N1665, D209L, 2N1667, 2N1668, 2N1669, 2N167, 2N1670, 2N1672, 2N1672A, 2N1673
Keywords - 2N1666 pdf specs
2N1666 cross reference
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History: S9014W-H | 2N1837 | 2N1840 | 2N6080
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