2N1666 Datasheet, Equivalent, Cross Reference Search

   Type Designator: 2N1666
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 32 V
   Maximum Emitter-Base Voltage |Veb|: 2 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 90 °C
   Transition Frequency (ft): 0.1 MHz
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TO3

2N1666 Transistor Equivalent Substitute - Cross-Reference Search