All Transistors. 2SC1779A Datasheet

 

2SC1779A Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SC1779A
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 0.02 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 450 MHz
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: TO92

 2SC1779A Transistor Equivalent Substitute - Cross-Reference Search

   

2SC1779A Datasheet (PDF)

 7.1. Size:43K  no
2sc1779.pdf

2SC1779A

 8.1. Size:79K  panasonic
2sc1778.pdf

2SC1779A

 8.2. Size:36K  hitachi
2sc1775.pdf

2SC1779A
2SC1779A

2SC1775, 2SC1775ASilicon NPN EpitaxialApplication Low frequency low noise amplifier Complementary pair with 2SA872/AOutlineTO-92 (1)1. Emitter2. Collector3. Base3212SC1775, 2SC1775AAbsolute Maximum Ratings (Ta = 25C)Item Symbol 2SC1775 2SC1775A UnitCollector to base voltage VCBO 90 120 VCollector to emitter voltage VCEO 90 120 VEmitter to base voltag

 8.3. Size:177K  inchange semiconductor
2sc1777.pdf

2SC1779A
2SC1779A

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1777DESCRIPTIONCollector-Emitter Sustaining Voltage-V = 70V(Min)CEO(SUS)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAutomotive ignitionSwitching regulatorMotor control applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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