2SC1973 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC1973
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.75 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 300 MHz
Collector Capacitance (Cc): 12 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO92
2SC1973 Transistor Equivalent Substitute - Cross-Reference Search
2SC1973 Datasheet (PDF)
2sc1975.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1975DESCRIPTIONCollector-Base Breakdown Voltage: V =160V(Min)(BR)CBOWithstands worst overload conditions.100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesign for used in transceiver power output applicationsABSOLUTE MAXIMUM RATINGS(T =25
2sc1971.pdf
isc Silicon NPN Power Transistor 2SC1971DESCRIPTIONHigh Power Gain-: G 7dB, P = 6W; V = 13.5Vpe O CEHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for RF power amplifiers on VHF band mobile radioapplications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Bas
2sc1970.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1970DESCRIPTIONHigh Power Gain-: G 9.2dB,f= 175MHz, P = 1W; V = 13.5Vpe O CCHigh Reliability100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for RF power amplifiers on VHF band mobile radioapplications.ABSOLUTE MAXIMUM RATING
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
