All Transistors. 2SC2167 Datasheet

 

2SC2167 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SC2167
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 150 V
   Maximum Collector-Emitter Voltage |Vce|: 150 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 10 MHz
   Collector Capacitance (Cc): 20 pF
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO220

 2SC2167 Transistor Equivalent Substitute - Cross-Reference Search

   

2SC2167 Datasheet (PDF)

 ..1. Size:230K  inchange semiconductor
2sc2167.pdf

2SC2167 2SC2167

isc Silicon NPN Power Transistor 2SC2167DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 150V(Min)(BR)CEODC Current Gain-: h = 60(Min)@ (V = 10V, I = 0.7A)FE CE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV vertical output ,audio output driver andgeneral purpose applications.ABSOLUTE MAXIMUM RA

 8.1. Size:73K  sanyo
2sc2161.pdf

2SC2167

 8.2. Size:26K  jmnic
2sc2166.pdf

2SC2167 2SC2167

Product Specification Silicon NPN Power Transistor 2SC2166 DESCRIPTION High Power Gain- : Gpe 13.8dB @f= 27MHz, PO= 6W; VCC= 12V High Reliability APPLICATIONS Designed for 3 to 4 watts output power amplifiers in HF band mobile radio applications. ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltage 45 V VCER Collector-Emit

 8.3. Size:185K  inchange semiconductor
2sc2166.pdf

2SC2167 2SC2167

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2166DESCRIPTIONHigh Power Gain-: G 13.8dB @f= 27MHz, P = 6W; V = 12Vpe O CCHigh ReliabilityMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for 3 to 4 watts output power amplifiers in HF bandmobile radio applications.ABSOLUTE MAXIMUM RATINGS (T =25

 8.4. Size:231K  inchange semiconductor
2sc2168.pdf

2SC2167 2SC2167

isc Silicon NPN Power Transistor 2SC2168DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 200V(Min)(BR)CEODC Current Gain-: h = 60(Min)@ (V = 10V, I = 0.7A)FE CE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV vertical output ,audio output driver andgeneral purpose applications.ABSOLUTE MAXIMUM RA

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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