2SC2167 Specs and Replacement
Type Designator: 2SC2167
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 150 V
Maximum Collector-Emitter Voltage |Vce|: 150 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 10 MHz
Collector Capacitance (Cc): 20 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO220
2SC2167 Substitution
2SC2167 datasheet
2sc2167.pdf
isc Silicon NPN Power Transistor 2SC2167 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 150V(Min) (BR)CEO DC Current Gain- h = 60(Min)@ (V = 10V, I = 0.7A) FE CE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV vertical output ,audio output driver and general purpose applications. ABSOLUTE MAXIMUM RA... See More ⇒
2sc2166.pdf
Product Specification Silicon NPN Power Transistor 2SC2166 DESCRIPTION High Power Gain- Gpe 13.8dB @f= 27MHz, PO= 6W; VCC= 12V High Reliability APPLICATIONS Designed for 3 to 4 watts output power amplifiers in HF band mobile radio applications. ABSOLUTE MAXIMUM RATINGS (Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 45 V VCER Collector-Emit... See More ⇒
Detailed specifications: 2SC216 , 2SC2160 , 2SC2161 , 2SC2162 , 2SC2163 , 2SC2164 , 2SC2165 , 2SC2166 , 13003 , 2SC2168 , 2SC2169 , 2SC217 , 2SC2172 , 2SC2173 , 2SC2174 , 2SC2175 , 2SC2176 .
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