2SC2314D Specs and Replacement
Type Designator: 2SC2314D
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 5 W
Maximum Collector-Base Voltage |Vcb|: 75 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 180 MHz
Collector Capacitance (Cc): 25 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Package: TO126
2SC2314D Substitution
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2SC2314D datasheet
isc Silicon NPN Power Transistor 2SC2314 DESCRIPTION Collector-Emitter Voltage- V = 75V(Min) ;R =150 CER BE Collector Current- I =1.5A C Low Saturation Voltage V =0.6V(MAX)@ IC=0.5A CE(sat) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power Amplifier Applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAM... See More ⇒
2SC458 (LG), 2SC2310 Silicon NPN Epitaxial Application Low frequency low noise amplifier Complementary pair with 2SA1031 and 2SA1032 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC458 (LG), 2SC2310 Absolute Maximum Ratings (Ta = 25 C) Item Symbol 2SC458 (LG) 2SC2310 Unit Collector to base voltage VCBO 30 55 V Collector to emitter voltage VCEO 30 50 V Emit... See More ⇒
Detailed specifications: 2SC231, 2SC2310, 2SC2310O, 2SC2310R, 2SC2311, 2SC2312, 2SC2313, 2SC2314, BD335, 2SC2314E, 2SC2314F, 2SC2315, 2SC2316, 2SC2316O, 2SC2316Y, 2SC2317, 2SC2318
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