2SC2358 Datasheet. Specs and Replacement
Type Designator: 2SC2358 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 1000 V
Maximum Collector-Emitter Voltage |Vce|: 800 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 15
Package: TO3
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2SC2358 datasheet
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2358 DESCRIPTION With TO-3 Package Low collector saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for color TV horizontal deflection driver ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1000 V CBO ... See More ⇒
2sc2351 2sc2149 2sc4092 ne02133 ne02135 ne02139.pdf ![]()
NEC's NPN SILICON HIGH NE021 FREQUENCY TRANSISTOR SERIES FEATURES HIGH INSERTION GAIN 18.5 dB at 500 MHz LOW NOISE FIGURE 1.5 dB at 500 MHz HIGH POWER GAIN 12 dB at 2 GHz LARGE DYNAMIC RANGE 19 dBm at 1 dB, 2 GHz Gain Compression DESCRIPTION 00 (CHIP) 07/07B NEC's NE021 series of NPN silicon transistors provides eco- nomical solutions to wide ranges of amplifier a... See More ⇒
Detailed specifications: 2SC235, 2SC2350, 2SC2351, 2SC2352, 2SC2353, 2SC2354, 2SC2356, 2SC2357, C5198, 2SC2359, 2SC236, 2SC2360, 2SC2361, 2SC2361A, 2SC2362, 2SC2362K, 2SC2363
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BJT Parameters and How They Relate
History: 2SC2349 | 2SC2335
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