2SC2368 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC2368
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.25 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 3000 MHz
Collector Capacitance (Cc): 0.7 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO128
2SC2368 Transistor Equivalent Substitute - Cross-Reference Search
2SC2368 Datasheet (PDF)
2sa1016 2sc2362 2sc2362k.pdf
Ordering number:ENN572EPNP/NPN Epitaxial Planar Silicon Transistors2SA1016, 1016K/2SC2362, 2362KHigh-Voltage Low-Noise Amp ApplicationsPackage Dimensionsunit:mm2003B[2SA1016, 1016K/2SC2362, 2362K]5.04.04.00.450.50.440.451 2 31 : Emitter( ) : 2SA1016, 1016K 2 : Collecor3 : BaseSpecifications 1.3 1.3SANYO : NPAbsolute Maximum Ratings at Ta = 25C2SA101
2sc2367.pdf
2SC2367NPN SILICON HI FREQUNCY TRANSISTOR DESCRIPTION: The ASI 2SC2367 is Designed for general purpose and small signal PACKAGE STYLE .100 4L PILL amplifier and oscillator applications up to 6.0 GHz. FEATURES INCLUDE: High frequency 8.0 GH Low noise, 1 dB at 0.5 GHz. MAXIMUM RATINGS: IC 80 mA VCBO 20 V VCEO 10 V VEBO 1.5 V PDISS 580 mW @ TA = 25 C TJ
2sc2365.pdf
Product Specification www.jmnic.comSilicon NPN Power Transistors 2SC2365 DESCRIPTION With TO-3 package High breakdown voltage APPLICATIONS For use in switch-mode CTV supply systems PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 Emitter3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE UNITVCB
2sc2365.pdf
isc Silicon NPN Power Transistor 2SC2365DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V (Min)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower switchingPower amplificationPower driverABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER MAX UNITV Collector-Base Voltage 6
2sc2361.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2361DESCRIPTIONCollector-Emitter Breakdown Voltage-:V = 70(V)(Min.)(BR)CEO100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSeries regulator,switch and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
