2SC2368 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC2368
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.25 W
Tensión colector-base (Vcb): 30 V
Tensión emisor-base (Veb): 3 V
Corriente del colector DC máxima (Ic): 0.05 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 3000 MHz
Capacitancia de salida (Cc): 0.7 pF
Ganancia de corriente contínua (hfe): 40
Paquete / Cubierta: TO128
Búsqueda de reemplazo de transistor bipolar 2SC2368
2SC2368 Datasheet (PDF)
2sa1016 2sc2362 2sc2362k.pdf
Ordering number:ENN572EPNP/NPN Epitaxial Planar Silicon Transistors2SA1016, 1016K/2SC2362, 2362KHigh-Voltage Low-Noise Amp ApplicationsPackage Dimensionsunit:mm2003B[2SA1016, 1016K/2SC2362, 2362K]5.04.04.00.450.50.440.451 2 31 : Emitter( ) : 2SA1016, 1016K 2 : Collecor3 : BaseSpecifications 1.3 1.3SANYO : NPAbsolute Maximum Ratings at Ta = 25C2SA101
2sc2367.pdf
2SC2367NPN SILICON HI FREQUNCY TRANSISTOR DESCRIPTION: The ASI 2SC2367 is Designed for general purpose and small signal PACKAGE STYLE .100 4L PILL amplifier and oscillator applications up to 6.0 GHz. FEATURES INCLUDE: High frequency 8.0 GH Low noise, 1 dB at 0.5 GHz. MAXIMUM RATINGS: IC 80 mA VCBO 20 V VCEO 10 V VEBO 1.5 V PDISS 580 mW @ TA = 25 C TJ
2sc2365.pdf
Product Specification www.jmnic.comSilicon NPN Power Transistors 2SC2365 DESCRIPTION With TO-3 package High breakdown voltage APPLICATIONS For use in switch-mode CTV supply systems PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 Emitter3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE UNITVCB
2sc2365.pdf
isc Silicon NPN Power Transistor 2SC2365DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V (Min)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower switchingPower amplificationPower driverABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER MAX UNITV Collector-Base Voltage 6
2sc2361.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2361DESCRIPTIONCollector-Emitter Breakdown Voltage-:V = 70(V)(Min.)(BR)CEO100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSeries regulator,switch and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI
Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
History: BFU910F | PDTC144WM | BUXD87-1
History: BFU910F | PDTC144WM | BUXD87-1
Liste
Recientemente añadidas las descripciónes de los transistores:
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