2SC272 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC272
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.036 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 12 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.02 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 600 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO50-1
2SC272 Transistor Equivalent Substitute - Cross-Reference Search
2SC272 Datasheet (PDF)
2sc2721.pdf
DATA SHEETSILICON TRANSISTOR2SC2721NPN SILICON EPITAXIAL TRANSISTORFOR HIGH-FREQUENCY AMPLIFIERS AND MID-SPEED SWITCHINGFEATURES PACKAGE DRAWING (UNIT: mm) Complementary transistor with 2SA1154 High PT in small dimension and high voltagePT = 1 W, VCEO = 60 VABSOLUTE MAXIMUM RATINGS (Ta = 25C)Parameter Symbol Ratings UnitCollector to base voltage VCBO 60
2sc2723.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2723DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedHigh Reliability100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLU
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: PBSS4230PANP
History: PBSS4230PANP
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BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050