2SC272 Specs and Replacement
Type Designator: 2SC272
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.036 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 12 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.02 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 600 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Package: TO50-1
2SC272 Substitution
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2SC272 datasheet
DATA SHEET SILICON TRANSISTOR 2SC2721 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-FREQUENCY AMPLIFIERS AND MID-SPEED SWITCHING FEATURES PACKAGE DRAWING (UNIT mm) Complementary transistor with 2SA1154 High PT in small dimension and high voltage PT = 1 W, VCEO = 60 V ABSOLUTE MAXIMUM RATINGS (Ta = 25 C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 60... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2723 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed High Reliability 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLU... See More ⇒
Detailed specifications: 2SC2715Y, 2SC2716, 2SC2716O, 2SC2716R, 2SC2716Y, 2SC2717, 2SC2718, 2SC2719, BC547, 2SC2720, 2SC2721, 2SC2722, 2SC2723, 2SC2724, 2SC2725, 2SC2726, 2SC2727
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