All Transistors. 2SC284H Datasheet

 

2SC284H Datasheet and Replacement


   Type Designator: 2SC284H
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.35 W
   Maximum Collector-Base Voltage |Vcb|: 70 V
   Maximum Collector-Emitter Voltage |Vce|: 35 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 90 MHz
   Collector Capacitance (Cc): 15 pF
   Forward Current Transfer Ratio (hFE), MIN: 35
   Noise Figure, dB: -
   Package: TO1
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2SC284H Datasheet (PDF)

 8.1. Size:183K  sanyo
 2sc2840.pdf pdf_icon

2SC284H

 8.2. Size:345K  kexin
 2sc2845.pdf pdf_icon

2SC284H

SMD Type TransistorsNPN Transistors2SC2845SOT-23Unit: mm2.9+0.1-0.1+0.10.4-0.13 Features Collector Current Capability IC=70mA1 2 Collector Emitter Voltage VCEO=12V+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collec

 8.3. Size:198K  inchange semiconductor
 2sc2841.pdf pdf_icon

2SC284H

isc Silicon NPN Power Transistor 2SC2841DESCRIPTIONHigh Breakdown Voltage-: V = 500V(Min)(BR)CBOHigh Switching SpeedLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV C

 8.4. Size:63K  inchange semiconductor
 2sc2845.pdf pdf_icon

2SC284H

INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC2845 DESCRIPTION Low Noise High Gain High Current-Gain Bandwidth Product APPLICATIONS Designed for use in UHF low noise amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base

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Keywords - 2SC284H transistor datasheet

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