2SC2983O Datasheet. Specs and Replacement
Type Designator: 2SC2983O 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 160 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 25 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Package: DPAK
2SC2983O Substitution
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2SC2983O datasheet
2SC2983 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2983 Power Amplifier Applications Unit mm Driver Stage Amplifier Applications High transition frequency fT = 100 MHz (typ.) Complementary to 2SA1225 Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 160 V Collector-emitter voltage VCEO 160 V Emitter-ba... See More ⇒
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors 2SC2983 TRANSISTOR (NPN) TO-252-2L FEATURES 1. BASE High Transition Frequency 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage... See More ⇒
Detailed specifications: 2SC2980, 2SC2981, 2SC2982, 2SC2982A, 2SC2982B, 2SC2982C, 2SC2982D, 2SC2983, 2SC2655, 2SC2983Y, 2SC2984, 2SC2985, 2SC2986, 2SC2986O, 2SC2986R, 2SC2986Y, 2SC2987
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