2SC302M Datasheet. Specs and Replacement

Type Designator: 2SC302M  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.36 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 185 °C

Electrical Characteristics

Transition Frequency (ft): 210 MHz

Collector Capacitance (Cc): 7 pF

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: TO18

 2SC302M Substitution

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2SC302M datasheet

 8.1. Size:37K  hitachi

 2sc3025 2sc3026.pdf pdf_icon

2SC302M

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 8.2. Size:189K  inchange semiconductor

 2sc3026.pdf pdf_icon

2SC302M

isc Silicon NPN Power Transistor 2SC3026 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 800V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 2.0V(Max)@ I = 5A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage power switching character display horizontal deflection output applic... See More ⇒

 8.3. Size:188K  inchange semiconductor

 2sc3025.pdf pdf_icon

2SC302M

isc Silicon NPN Power Transistor 2SC3025 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 800V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 2.0V(Max)@ I = 5A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage power switching character display horizontal deflection output applic... See More ⇒

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Detailed specifications: 2SC3022, 2SC3023, 2SC3024, 2SC3025, 2SC3026, 2SC3027, 2SC3028, 2SC3029, 2SD718, 2SC303, 2SC3030, 2SC3031, 2SC3032, 2SC3033, 2SC3034, 2SC3035, 2SC3036

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