2SC3281R Specs and Replacement
Type Designator: 2SC3281R
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 200 V
Maximum Collector-Emitter Voltage |Vce|: 200 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 30 MHz
Collector Capacitance (Cc): 270 pF
Forward Current Transfer Ratio (hFE), MIN: 80
Package: TO3PL
2SC3281R Substitution
- BJT ⓘ Cross-Reference Search
2SC3281R datasheet
JMnic Product Specification Silicon NPN Power Transistors 2SC3281 DESCRIPTION With TO-3PL package Complement to type 2SA1302 APPLICATIONS Power amplifier applications Recommended for 100W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PL) and symbol 3 ... See More ⇒
isc Silicon NPN Power Transistor 2SC3281 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 200V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 3.0V(Max)@ I = 10A, I = 1A CE(sat) C B High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 100W high fid... See More ⇒
Detailed specifications: 2SC3279N, 2SC3279P, 2SC328, 2SC3280, 2SC3280O, 2SC3280R, 2SC3281, 2SC3281O, 2N3055, 2SC3282, 2SC3282A, 2SC3283, 2SC3283A, 2SC3284, 2SC3285, 2SC3286, 2SC3287
Keywords - 2SC3281R pdf specs
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History: 2SC3291 | 2SC3290
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