2N199 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N199
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.1 W
Maximum Collector-Base Voltage |Vcb|: 36 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 75 °C
Transition Frequency (ft): 0.2 MHz
Collector Capacitance (Cc): 60 pF
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO29
2N199 Transistor Equivalent Substitute - Cross-Reference Search
2N199 Datasheet (PDF)
2n1991.pdf
2N1991Dimensions in mm (inches). Bipolar PNP Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar PNP Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 20V dia.IC = 0.3A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1
Datasheet: 2N1982 , 2N1983 , 2N1984 , 2N1985 , 2N1986 , 2N1987 , 2N1988 , 2N1989 , TIP127 , 2N1990 , 2N1990-46 , 2N1990N , 2N1990R , 2N1990S , 2N1990W , 2N1991 , 2N1991S .