2N1990S Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N1990S
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.25 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 40 MHz
Collector Capacitance (Cc): 20 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO5
2N1990S Transistor Equivalent Substitute - Cross-Reference Search
2N1990S Datasheet (PDF)
9.1. Size:11K semelab
2n1991.pdf
2n1991.pdf
2N1991Dimensions in mm (inches). Bipolar PNP Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar PNP Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 20V dia.IC = 0.3A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1
Datasheet: 2N1987 , 2N1988 , 2N1989 , 2N199 , 2N1990 , 2N1990-46 , 2N1990N , 2N1990R , 2SC2383Y , 2N1990W , 2N1991 , 2N1991S , 2N1992 , 2N1993 , 2N1994 , 2N1995 , 2N1996 .
