2N1990S Datasheet. Specs and Replacement

Type Designator: 2N1990S  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.25 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 40 MHz

Collector Capacitance (Cc): 20 pF

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO5

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2N1990S datasheet

 9.1. Size:11K  semelab

 2n1991.pdf pdf_icon

2N1990S

2N1991 Dimensions in mm (inches). Bipolar PNP Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 20V dia. IC = 0.3A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 ... See More ⇒

Detailed specifications: 2N1987, 2N1988, 2N1989, 2N199, 2N1990, 2N1990-46, 2N1990N, 2N1990R, C3198, 2N1990W, 2N1991, 2N1991S, 2N1992, 2N1993, 2N1994, 2N1995, 2N1996

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