All Transistors. 2SC3421O Datasheet

 

2SC3421O Datasheet and Replacement


   Type Designator: 2SC3421O
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 10 W
   Maximum Collector-Base Voltage |Vcb|: 120 V
   Maximum Collector-Emitter Voltage |Vce|: 120 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 120 MHz
   Collector Capacitance (Cc): 15 pF
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: ISO126
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2SC3421O Datasheet (PDF)

 7.1. Size:176K  toshiba
 2sc3421.pdf pdf_icon

2SC3421O

 7.2. Size:292K  foshan
 2sc3421 3da3421.pdf pdf_icon

2SC3421O

2SC3421(3DA3421) NPN /SILICON NPN TRANSISTOR : Purpose: Audio frequency power amplifier applications. : V 60-80W 2SA13583CA1358 CEO Features: High V ,suitable for driver of 60 to 80 watts audio amplifier, complementary CEOto 2SA1358(3CA1358). /Absolute

 7.3. Size:217K  inchange semiconductor
 2sc3421.pdf pdf_icon

2SC3421O

isc Silicon NPN Power Transistor 2SC3421DESCRIPTIONHigh Collector-Emitter Breakdown Voltage: V = 120V(Min)(BR)CEOComplement to Type 2SA1358Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier applications.Suitable for driver of 60 to 80 Watts audio amplifier.ABSOLUTE MAXIMUM RATI

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Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2N706C-46 | 2N706B | 2SC495 | CSA1015Y | BD139-16

Keywords - 2SC3421O transistor datasheet

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