2SC4758 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC4758
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 1500 V
Maximum Collector-Emitter Voltage |Vce|: 600 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 1 MHz
Collector Capacitance (Cc): 175 pF
Forward Current Transfer Ratio (hFE), MIN: 8
Noise Figure, dB: -
Package: ISOWATT218
2SC4758 Transistor Equivalent Substitute - Cross-Reference Search
2SC4758 Datasheet (PDF)
2sc4758.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4758DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHorizontal deflection output for high resolution display.High speed switching power s
2sc4755 e.pdf
Transistor2SC4755Silicon NPN epitaxial planer typeFor high speed switchingUnit: mm2.1 0.10.425 1.25 0.1 0.425FeaturesHigh-speed switching. 1Low collector to emitter saturation voltage VCE(sat).S-Mini type package, allowing downsizing of the equipment and3automatic insertion through the tape packing and the magazine2packing.Absolute Maximum Ratings (Ta=25C)
2sc4755.pdf
Transistor2SC4755Silicon NPN epitaxial planer typeFor high speed switchingUnit: mm2.1 0.10.425 1.25 0.1 0.425FeaturesHigh-speed switching. 1Low collector to emitter saturation voltage VCE(sat).S-Mini type package, allowing downsizing of the equipment and3automatic insertion through the tape packing and the magazine2packing.Absolute Maximum Ratings (Ta=25C)
2sc4759.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4759DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHorizontal deflection output for high resolution display.High speed switching power s
2sc4757.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4757DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHorizontal deflection output for high resolution display.High speed switching power s
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
