All Transistors. 2SC4878 Datasheet

 

2SC4878 Datasheet and Replacement


   Type Designator: 2SC4878
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 50 W
   Maximum Collector-Base Voltage |Vcb|: 1500 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TO3PFM
 

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2SC4878 Datasheet (PDF)

 ..1. Size:188K  inchange semiconductor
 2sc4878.pdf pdf_icon

2SC4878

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4878DESCRIPTIONHigh Breakdown VoltageHigh Switching SpeedBuilt in damper diode100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSVery high-definition CRT display horizontal deflectionoutput applicationsABSOLUTE MAXIMUM RATINGS(T =25)a

 8.1. Size:743K  1
 2sc482 2sc483 2sc484 2sc485 2sc486 2sc487 2sc488 2sc489.pdf pdf_icon

2SC4878

 8.2. Size:126K  sanyo
 2sc4871.pdf pdf_icon

2SC4878

Ordering number:EN4857NPN Epitaxial Planar Silicon Transistor2SC4871UHF to S Band Low-Noise Amplifier,OSC ApplicationsFeatures Package Dimensions High cutoff frequency : fT=10GHz typ.unit:mm2 High gain : S21e =13dB typ (f=1GHz).2059B Low noise : NF=1.3dB typ (f=1GHz).[2SC4871] Small Cob : Cob=0.4pF typ.0.30.1530 to 0.11 20.3 0.60.65 0.6

 8.3. Size:21K  hitachi
 2sc4877.pdf pdf_icon

2SC4878

2SC4877Silicon NPN Triple DiffusedApplicationTO3PFMTV / character display horizontal deflection outputFeatures High breakdown voltage1. BaseVCES = 1500 V 2. Collector3. Emitter Builtin damper diode type Isolated packageTO-3PFM123213Absolute Maximum Ratings (Ta = 25C)Item Symbol Rating Unit

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Datasheet: 2SC485R , 2SC485Y , 2SC486 , 2SC486B , 2SC486R , 2SC486Y , 2SC487 , 2SC4877 , 2SA1015 , 2SC4879 , 2SC487A , 2SC488 , 2SC4880 , 2SC4881 , 2SC489 , 2SC4896 , 2SC4897 .

History: 2N1045 | 2SC4081U3HZG

Keywords - 2SC4878 transistor datasheet

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