2SC4878 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC4878
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 1500 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO3PFM
2SC4878 Transistor Equivalent Substitute - Cross-Reference Search
2SC4878 Datasheet (PDF)
2sc4878.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4878DESCRIPTIONHigh Breakdown VoltageHigh Switching SpeedBuilt in damper diode100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSVery high-definition CRT display horizontal deflectionoutput applicationsABSOLUTE MAXIMUM RATINGS(T =25)a
2sc4871.pdf
Ordering number:EN4857NPN Epitaxial Planar Silicon Transistor2SC4871UHF to S Band Low-Noise Amplifier,OSC ApplicationsFeatures Package Dimensions High cutoff frequency : fT=10GHz typ.unit:mm2 High gain : S21e =13dB typ (f=1GHz).2059B Low noise : NF=1.3dB typ (f=1GHz).[2SC4871] Small Cob : Cob=0.4pF typ.0.30.1530 to 0.11 20.3 0.60.65 0.6
2sc4877.pdf
2SC4877Silicon NPN Triple DiffusedApplicationTO3PFMTV / character display horizontal deflection outputFeatures High breakdown voltage1. BaseVCES = 1500 V 2. Collector3. Emitter Builtin damper diode type Isolated packageTO-3PFM123213Absolute Maximum Ratings (Ta = 25C)Item Symbol Rating Unit
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
