2SC564 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC564
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.65 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 175 °C
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO39
2SC564 Transistor Equivalent Substitute - Cross-Reference Search
2SC564 Datasheet (PDF)
2sc5647.pdf
Ordering number : ENN73262SC5647NPN Epitaxial Planar Silicon Transistor2SC5647UHF to S Band Low-Noise Amplifierand OSC ApplicationsFeatures Package Dimensions Low noise : NF=2.6dB typ (f=2GHz). unit : mm High cutoff frequency : fT=9.0GHz typ (VCE=1V). 2106A: fT=11.5GHz typ (VCE=3V).[2SC5647] Low operating voltage.0.75 High gain : S21e2=10.5dB typ (f=2
2sc5645.pdf
Ordering number : ENN65882SC5645NPN Epitaxial Planar Silicon Transistor2SC5645UHF to S Band Low-Noise Amplifierand OSC ApplicationsFeatures Package Dimensions Low noise : NF=1.5dB typ (f=2GHz). unit : mm High cutoff frequency : fT=10GHz typ (VCE=1V). 2106A : fT=12.5GHz typ (VCE=3V).[2SC5645] Low-voltage operating . High gain :S21e2=9.5dB typ (f=2GHz). 0
2sc5646a.pdf
Ordering number : ENA1120 2SC5646ASANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorUHF to S-Band Low-Noise Amplifier,2SC5646AOSC ApplicationsFeatures Low-noise : NF=1.5dB typ (f=2GHz). High cut-off frequency : fT=10GHz typ (VCE=1V).: fT=12.5GHz typ (VCE=3V). Low-voltage operation. High gain : S21e2=9.5dB typ (f=2GHz). Ultrasmall
2sc5646.pdf
Ordering number : ENN66062SC5646NPN Epitaxial Planar Silicon Transistor2SC5646UHF to S Band Low-Noise Amplifierand OSC ApplicationsFeatures Package Dimensions Low-noise use : NF=1.5dB typ (f=2GHz). unit : mm High cut-off frequency : fT=10GHz typ (VCE=1V). 2159: fT=12.5GHz typ (VCE=3V).[2SC5646] Low operating voltage. High gain :S21e2=9.5dB typ (f=2GHz).
2sc5649 ne856m23.pdf
PRELIMINARY DATA SHEETNPN SILICON TRANSISTOR NE856M23OUTLINE DIMENSIONS (Units in mm)FEATURESPACKAGE OUTLINE M23 NEW MINIATURE M23 PACKAGE: World's smallest transistor package footprint leads are completely underneath package body0.5 Low profile/0.55 mm package height Ceramic substrate for better RF performance0.251 LOW NOISE FIGURE:NF = 1.4 dB at
2sc5646a.pdf
Ordering number : ENA1120A2SC5646ARF Transistorhttp://onsemi.com4V, 30mA, fT=12.5GHz, NPN Single SSFPFeatures Low-noise : NF=1.5dB typ (f=2GHz) High cut-off frequency : fT=10GHz typ (VCE=1V) : fT=12.5GHz typ (VCE=3V) Low-voltage operation High gain 2 : S21e =9.5dB typ (f=2GHz) Ultrasmall, slim flat-lead package (1.4mm0.8mm0.6mm) Halogen
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
