2SC579 Specs and Replacement

Type Designator: 2SC579

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.36 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.2 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO18

 2SC579 Substitution

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2SC579 datasheet

 0.1. Size:51K  sanyo

2sc5793.pdf pdf_icon

2SC579

No. N7451 2SC5793 N7451 No. 31504 NPN CRT 2SC5793 VCBO=1600V HVP MBIT Absolute Maxi... See More ⇒

 0.2. Size:29K  sanyo

2sc5792.pdf pdf_icon

2SC579

Ordering number ENN6994 2SC5792 NPN Triple Diffused Planar Silicon Transistor 2SC5792 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage(VCBO=1600V). 2174A High reliability(Adoption of HVP process). [2SC5792] Adoption of MBIT process. 5.6 3.4 16.0 3.1 2.8 2.0 2.... See More ⇒

 0.3. Size:31K  sanyo

2sc5791.pdf pdf_icon

2SC579

Ordering number ENN6993 2SC5791 NPN Triple Diffused Planar Silicon Transistor 2SC5791 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage(VCBO=1600V). 2174A High reliability(Adoption of HVP process). [2SC5791] Adoption of MBIT process. 5.6 3.4 16.0 3.1 2.8 2.0 2.... See More ⇒

Detailed specifications: 2SC571, 2SC572, 2SC573, 2SC574, 2SC575, 2SC576, 2SC577, 2SC578, BC549, 2SC58, 2SC580, 2SC581, 2SC582, 2SC582A, 2SC583, 2SC583Z, 2SC584

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