2SC579 Datasheet and Replacement
Type Designator: 2SC579
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.36 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 175 °C
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO18
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2SC579 Datasheet (PDF)
2sc5793.pdf

No. N74512SC5793N7451No.31504 NPN CRT 2SC5793 VCBO=1600V HVP MBIT Absolute Maxi
2sc5792.pdf

Ordering number : ENN69942SC5792NPN Triple Diffused Planar Silicon Transistor2SC5792Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeaturesPackage Dimensions High speed.unit : mm High breakdown voltage(VCBO=1600V).2174A High reliability(Adoption of HVP process).[2SC5792] Adoption of MBIT process.5.63.416.03.12.82.0 2.
2sc5791.pdf

Ordering number : ENN69932SC5791NPN Triple Diffused Planar Silicon Transistor2SC5791Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeaturesPackage Dimensions High speed.unit : mm High breakdown voltage(VCBO=1600V).2174A High reliability(Adoption of HVP process).[2SC5791] Adoption of MBIT process.5.63.416.03.12.82.0 2.
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: 2SA416 | DMJT9435 | 2N249 | 2SC3298A | 2N5031 | 2SA982 | BU100
Keywords - 2SC579 transistor datasheet
2SC579 cross reference
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History: 2SA416 | DMJT9435 | 2N249 | 2SC3298A | 2N5031 | 2SA982 | BU100



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