2SC579 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC579
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.36 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 175 °C
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO18
2SC579 Transistor Equivalent Substitute - Cross-Reference Search
2SC579 Datasheet (PDF)
2sc5793.pdf
No. N74512SC5793N7451No.31504 NPN CRT 2SC5793 VCBO=1600V HVP MBIT Absolute Maxi
2sc5792.pdf
Ordering number : ENN69942SC5792NPN Triple Diffused Planar Silicon Transistor2SC5792Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeaturesPackage Dimensions High speed.unit : mm High breakdown voltage(VCBO=1600V).2174A High reliability(Adoption of HVP process).[2SC5792] Adoption of MBIT process.5.63.416.03.12.82.0 2.
2sc5791.pdf
Ordering number : ENN69932SC5791NPN Triple Diffused Planar Silicon Transistor2SC5791Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeaturesPackage Dimensions High speed.unit : mm High breakdown voltage(VCBO=1600V).2174A High reliability(Adoption of HVP process).[2SC5791] Adoption of MBIT process.5.63.416.03.12.82.0 2.
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
