2SC579 Specs and Replacement
Type Designator: 2SC579
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.36 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO18
2SC579 Substitution
- BJT ⓘ Cross-Reference Search
2SC579 datasheet
No. N7451 2SC5793 N7451 No. 31504 NPN CRT 2SC5793 VCBO=1600V HVP MBIT Absolute Maxi... See More ⇒
Ordering number ENN6994 2SC5792 NPN Triple Diffused Planar Silicon Transistor 2SC5792 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage(VCBO=1600V). 2174A High reliability(Adoption of HVP process). [2SC5792] Adoption of MBIT process. 5.6 3.4 16.0 3.1 2.8 2.0 2.... See More ⇒
Ordering number ENN6993 2SC5791 NPN Triple Diffused Planar Silicon Transistor 2SC5791 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage(VCBO=1600V). 2174A High reliability(Adoption of HVP process). [2SC5791] Adoption of MBIT process. 5.6 3.4 16.0 3.1 2.8 2.0 2.... See More ⇒
Detailed specifications: 2SC571, 2SC572, 2SC573, 2SC574, 2SC575, 2SC576, 2SC577, 2SC578, BC549, 2SC58, 2SC580, 2SC581, 2SC582, 2SC582A, 2SC583, 2SC583Z, 2SC584
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