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2SC681ARD Specs and Replacement


   Type Designator: 2SC681ARD
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 50 W
   Maximum Collector-Base Voltage |Vcb|: 200 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 6 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: TO3

 2SC681ARD Transistor Equivalent Substitute - Cross-Reference Search

   

2SC681ARD detailed specifications

 8.1. Size:107K  mospec
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2SC681ARD

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 8.2. Size:186K  inchange semiconductor
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2SC681ARD

isc Silicon NPN Power Transistor 2SC681 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 70V (Min) CEO(SUS) Low Collector Saturation Voltage- V = 2.0V(Max.)@ I = 5A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in B/W TV horizontal output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a ... See More ⇒

 9.1. Size:1146K  1
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2SC681ARD

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Detailed specifications: 2SC678 , 2SC679 , 2SC679A , 2SC68 , 2SC680 , 2SC680A , 2SC681 , 2SC681A , 2SC4793 , 2SC682 , 2SC682A , 2SC683 , 2SC683A , 2SC684 , 2SC685 , 2SC685A , 2SC685H .

Keywords - 2SC681ARD transistor specs

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