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2SC825 Specs and Replacement


   Type Designator: 2SC825
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 300 V
   Maximum Collector-Emitter Voltage |Vce|: 300 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 2 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 7 MHz
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO66
 

 2SC825 Substitution

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2SC825 detailed specifications

 9.1. Size:55K  panasonic
 2sc829.pdf pdf_icon

2SC825

Transistor 2SC829 Silicon NPN epitaxial planer type For high-frequency amplification Unit mm 5.0 0.2 4.0 0.2 Features Optimum for RF amplification, oscillation, mixing, and IF stage of FM/AM radios. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 0.1 0.45 0.1 Collector to base voltage VCBO 30 V 1.27 1.27 Collector to emitter voltage VCE... See More ⇒

 9.2. Size:59K  panasonic
 2sc829 e.pdf pdf_icon

2SC825

Transistor 2SC829 Silicon NPN epitaxial planer type For high-frequency amplification Unit mm 5.0 0.2 4.0 0.2 Features Optimum for RF amplification, oscillation, mixing, and IF stage of FM/AM radios. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 0.1 0.45 0.1 Collector to base voltage VCBO 30 V 1.27 1.27 Collector to emitter voltage VCE... See More ⇒

 9.3. Size:53K  no
 2sc828.pdf pdf_icon

2SC825

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Detailed specifications: 2SC82 , 2SC820 , 2SC821 , 2SC821Z , 2SC822 , 2SC822Z , 2SC823 , 2SC824 , 2N4401 , 2SC826 , 2SC827 , 2SC827T , 2SC828 , 2SC828A , 2SC829 , 2SC829Z , 2SC83 .

Keywords - 2SC825 transistor specs

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