2SC825 Datasheet. Specs and Replacement
Type Designator: 2SC825 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 300 V
Maximum Collector-Emitter Voltage |Vce|: 300 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 7 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO66
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2SC825 datasheet
Transistor 2SC829 Silicon NPN epitaxial planer type For high-frequency amplification Unit mm 5.0 0.2 4.0 0.2 Features Optimum for RF amplification, oscillation, mixing, and IF stage of FM/AM radios. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 0.1 0.45 0.1 Collector to base voltage VCBO 30 V 1.27 1.27 Collector to emitter voltage VCE... See More ⇒
Transistor 2SC829 Silicon NPN epitaxial planer type For high-frequency amplification Unit mm 5.0 0.2 4.0 0.2 Features Optimum for RF amplification, oscillation, mixing, and IF stage of FM/AM radios. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 0.1 0.45 0.1 Collector to base voltage VCBO 30 V 1.27 1.27 Collector to emitter voltage VCE... See More ⇒
Detailed specifications: 2SC82, 2SC820, 2SC821, 2SC821Z, 2SC822, 2SC822Z, 2SC823, 2SC824, 2N4401, 2SC826, 2SC827, 2SC827T, 2SC828, 2SC828A, 2SC829, 2SC829Z, 2SC83
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BJT Parameters and How They Relate
History: HSB857 | 2SA812H | MJE371 | HNT1T05 | 2SC5195 | HS5810 | BD544A
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