2G30 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2G30
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.09 W
Maximum Collector-Base Voltage |Vcb|: 5 V
Maximum Collector-Emitter Voltage |Vce|: 5 V
Maximum Emitter-Base Voltage |Veb|: 1 V
Maximum Collector Current |Ic max|: 0.025 A
Max. Operating Junction Temperature (Tj): 100 °C
Transition Frequency (ft): 3.5 MHz
Collector Capacitance (Cc): 27 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO1
2G30 Transistor Equivalent Substitute - Cross-Reference Search
2G30 Datasheet (PDF)
dm2g300sh6a.pdf
DM2G300SH6AAug. 2009High Power NPT & Rugged Type IGBT ModuleDescription Equivalent Circuit and Package DAWINS IGBT 7DM-3 Package devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drivesand other applications where switching los
dm2g300sh6ne.pdf
D WTMD WTMDM2G300SH6NEDAWIN ElectronicsDAWIN ElectronicsJan. 2012High Power Rugged Type IGBT ModuleDescription Equivalent Circuit and Package DAWINS IGBT 7DM-2 Package devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors dri
dm2g300sh12a.pdf
PreliminaryD WTMD WTMDM2G300SH12ADAWIN ElectronicsDAWIN ElectronicsMar. 2008High Power SPT+ & Lugged Type IGBT ModuleDescriptionEquivalent Circuit and Package Equivalent Circuit and PackageDAWINS IGBT 7DM-3 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. Equivalent Circuit These IGBT modul
Datasheet: 2G226 , 2G227 , 2G228 , 2G229 , 2G230 , 2G231 , 2G240 , 2G271 , S9013 , 2G301 , 2G302 , 2G303 , 2G304 , 2G306 , 2G308 , 2G309 , 2G319 .
