2G30 Specs and Replacement
Type Designator: 2G30
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.09 W
Maximum Collector-Base Voltage |Vcb|: 5 V
Maximum Collector-Emitter Voltage |Vce|: 5 V
Maximum Emitter-Base Voltage |Veb|: 1 V
Maximum Collector Current |Ic max|: 0.025 A
Max. Operating Junction Temperature (Tj): 100 °C
Electrical Characteristics
Transition Frequency (ft): 3.5 MHz
Collector Capacitance (Cc): 27 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Package: TO1
2G30 Substitution
- BJT ⓘ Cross-Reference Search
2G30 datasheet
DM2G300SH6A Aug. 2009 High Power NPT & Rugged Type IGBT Module Description Equivalent Circuit and Package DAWIN S IGBT 7DM-3 Package devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drives and other applications where switching los... See More ⇒
D WTM D WTM DM2G300SH6NE DAWIN Electronics DAWIN Electronics Jan. 2012 High Power Rugged Type IGBT Module Description Equivalent Circuit and Package DAWIN S IGBT 7DM-2 Package devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors dri... See More ⇒
Preliminary D WTM D WTM DM2G300SH12A DAWIN Electronics DAWIN Electronics Mar. 2008 High Power SPT+ & Lugged Type IGBT Module Description Equivalent Circuit and Package Equivalent Circuit and Package DAWIN S IGBT 7DM-3 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. Equivalent Circuit These IGBT modul... See More ⇒
Detailed specifications: 2G226, 2G227, 2G228, 2G229, 2G230, 2G231, 2G240, 2G271, 2222A, 2G301, 2G302, 2G303, 2G304, 2G306, 2G308, 2G309, 2G319
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History: 2SA1708T-AN | 2G231 | SDT9304
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