2G30 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2G30
Material: Ge
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.09 W
Tensión colector-base (Vcb): 5 V
Tensión colector-emisor (Vce): 5 V
Tensión emisor-base (Veb): 1 V
Corriente del colector DC máxima (Ic): 0.025 A
Temperatura operativa máxima (Tj): 100 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 3.5 MHz
Capacitancia de salida (Cc): 27 pF
Ganancia de corriente contínua (hfe): 30
Paquete / Cubierta: TO1
Búsqueda de reemplazo de 2G30
2G30 PDF detailed specifications
dm2g300sh6a.pdf
DM2G300SH6A Aug. 2009 High Power NPT & Rugged Type IGBT Module Description Equivalent Circuit and Package DAWIN S IGBT 7DM-3 Package devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drives and other applications where switching los... See More ⇒
dm2g300sh6ne.pdf
D WTM D WTM DM2G300SH6NE DAWIN Electronics DAWIN Electronics Jan. 2012 High Power Rugged Type IGBT Module Description Equivalent Circuit and Package DAWIN S IGBT 7DM-2 Package devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors dri... See More ⇒
dm2g300sh12a.pdf
Preliminary D WTM D WTM DM2G300SH12A DAWIN Electronics DAWIN Electronics Mar. 2008 High Power SPT+ & Lugged Type IGBT Module Description Equivalent Circuit and Package Equivalent Circuit and Package DAWIN S IGBT 7DM-3 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. Equivalent Circuit These IGBT modul... See More ⇒
Otros transistores... 2G226 , 2G227 , 2G228 , 2G229 , 2G230 , 2G231 , 2G240 , 2G271 , 2222A , 2G301 , 2G302 , 2G303 , 2G304 , 2G306 , 2G308 , 2G309 , 2G319 .
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
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