2G30 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2G30  📄📄 

Material: Ge

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.09 W

Tensión colector-base (Vcb): 5 V

Tensión colector-emisor (Vce): 5 V

Tensión emisor-base (Veb): 1 V

Corriente del colector DC máxima (Ic): 0.025 A

Temperatura operativa máxima (Tj): 100 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 3.5 MHz

Capacitancia de salida (Cc): 27 pF

Ganancia de corriente contínua (hFE): 30

Encapsulados: TO1

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2G30 datasheet

 0.1. Size:710K  dawin
 dm2g300sh6a.pdf pdf_icon

2G30

DM2G300SH6A Aug. 2009 High Power NPT & Rugged Type IGBT Module Description Equivalent Circuit and Package DAWIN S IGBT 7DM-3 Package devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drives and other applications where switching los

 0.2. Size:307K  dawin
 dm2g300sh6ne.pdf pdf_icon

2G30

D WTM D WTM DM2G300SH6NE DAWIN Electronics DAWIN Electronics Jan. 2012 High Power Rugged Type IGBT Module Description Equivalent Circuit and Package DAWIN S IGBT 7DM-2 Package devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors dri

 0.3. Size:67K  dawin
 dm2g300sh12a.pdf pdf_icon

2G30

Preliminary D WTM D WTM DM2G300SH12A DAWIN Electronics DAWIN Electronics Mar. 2008 High Power SPT+ & Lugged Type IGBT Module Description Equivalent Circuit and Package Equivalent Circuit and Package DAWIN S IGBT 7DM-3 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. Equivalent Circuit These IGBT modul

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