2SC867 Specs and Replacement

Type Designator: 2SC867

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 23 W

Maximum Collector-Base Voltage |Vcb|: 400 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 125 °C

Electrical Characteristics

Transition Frequency (ft): 4 MHz

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO66

 2SC867 Substitution

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2SC867 datasheet

 ..1. Size:154K  jmnic

 2sc867.pdf pdf_icon

2SC867

JMnic Product Specification Silicon NPN Power Transistors 2SC867 DESCRIPTION With TO-66 package High collector-base breakdown voltage VCBO=400V(min) APPLICATIONS For high voltage and switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER... See More ⇒

 ..2. Size:189K  inchange semiconductor

 2sc867.pdf pdf_icon

2SC867

isc Silicon NPN Power Transistor 2SC867 DESCRIPTION With TO-66 Package Low collector saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in line-operated color TV chroma output circuits and sound output circuits. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Vo... See More ⇒

Detailed specifications: 2SC86, 2SC860, 2SC861, 2SC862, 2SC863, 2SC864, 2SC865, 2SC866, BD140, 2SC867A, 2SC868, 2SC869, 2SC87, 2SC870, 2SC871, 2SC872, 2SC872M

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