2SC867 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC867
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 23 W
Maximum Collector-Base Voltage |Vcb|: 400 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 125 °C
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO66
2SC867 Transistor Equivalent Substitute - Cross-Reference Search
2SC867 Datasheet (PDF)
2sc867.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC867 DESCRIPTION With TO-66 package High collector-base breakdown voltage :VCBO=400V(min) APPLICATIONS For high voltage and switching applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-66) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER
2sc867.pdf
isc Silicon NPN Power Transistor 2SC867DESCRIPTIONWith TO-66 PackageLow collector saturation voltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in line-operated color TV chromaoutput circuits and sound output circuits.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Vo
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
